An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

Nelson E. Lourenco, Saeed Zeinolabedinzadeh, Adrian Ildefonso, Zachary E. Fleetwood, Christopher T. Coen, Ickhyun Song, Seungwoo Jung, Farzad Inanlou, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki, John D. Cressler

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity of the SiGe LNA is highly dependent on operating conditions and strike location. Time and frequency-domain analyses raise potential concerns for digital data modulated on RF carrier signals. Device and circuit-level ion-strike TCAD simulations are utilized to compare alternative simulation approaches, highlight the importance of parasitics on SET simulation accuracy, and suggest best practices for modeling radiation-induced transients within RF/mm-wave circuits.

Original languageEnglish (US)
Article number7407492
Pages (from-to)273-280
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number1
DOIs
StatePublished - Feb 1 2016
Externally publishedYes

Fingerprint

Low noise amplifiers
low noise
amplifiers
Radiation
simulation
Networks (circuits)
Pulsed lasers
Transient analysis
digital data
transient response
ultrahigh frequencies
radiation
Photons
recommendations
pulsed lasers
Ions
sensitivity
photons
Experiments
ions

Keywords

  • Charge collection
  • current injection
  • MixCAD
  • mixed mode
  • NanoTCAD
  • parasitics
  • radiation hardening
  • SiGe HBT
  • silicon-germanium technology
  • single-event effects (SEE)
  • single-event transient (SET)
  • two-photon absorption experiments

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Lourenco, N. E., Zeinolabedinzadeh, S., Ildefonso, A., Fleetwood, Z. E., Coen, C. T., Song, I., ... Cressler, J. D. (2016). An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier. IEEE Transactions on Nuclear Science, 63(1), 273-280. [7407492]. https://doi.org/10.1109/TNS.2015.2509250

An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier. / Lourenco, Nelson E.; Zeinolabedinzadeh, Saeed; Ildefonso, Adrian; Fleetwood, Zachary E.; Coen, Christopher T.; Song, Ickhyun; Jung, Seungwoo; Inanlou, Farzad; Roche, Nicolas J.H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki, Pauline; Cressler, John D.

In: IEEE Transactions on Nuclear Science, Vol. 63, No. 1, 7407492, 01.02.2016, p. 273-280.

Research output: Contribution to journalArticle

Lourenco, NE, Zeinolabedinzadeh, S, Ildefonso, A, Fleetwood, ZE, Coen, CT, Song, I, Jung, S, Inanlou, F, Roche, NJH, Khachatrian, A, McMorrow, D, Buchner, SP, Warner, JH, Paki, P & Cressler, JD 2016, 'An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier', IEEE Transactions on Nuclear Science, vol. 63, no. 1, 7407492, pp. 273-280. https://doi.org/10.1109/TNS.2015.2509250
Lourenco, Nelson E. ; Zeinolabedinzadeh, Saeed ; Ildefonso, Adrian ; Fleetwood, Zachary E. ; Coen, Christopher T. ; Song, Ickhyun ; Jung, Seungwoo ; Inanlou, Farzad ; Roche, Nicolas J.H. ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Warner, Jeffrey H. ; Paki, Pauline ; Cressler, John D. / An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier. In: IEEE Transactions on Nuclear Science. 2016 ; Vol. 63, No. 1. pp. 273-280.
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