Abstract
The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity of the SiGe LNA is highly dependent on operating conditions and strike location. Time and frequency-domain analyses raise potential concerns for digital data modulated on RF carrier signals. Device and circuit-level ion-strike TCAD simulations are utilized to compare alternative simulation approaches, highlight the importance of parasitics on SET simulation accuracy, and suggest best practices for modeling radiation-induced transients within RF/mm-wave circuits.
Original language | English (US) |
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Article number | 7407492 |
Pages (from-to) | 273-280 |
Number of pages | 8 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 63 |
Issue number | 1 |
DOIs | |
State | Published - Feb 1 2016 |
Externally published | Yes |
Keywords
- Charge collection
- MixCAD
- NanoTCAD
- SiGe HBT
- current injection
- mixed mode
- parasitics
- radiation hardening
- silicon-germanium technology
- single-event effects (SEE)
- single-event transient (SET)
- two-photon absorption experiments
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering