An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

Nelson E. Lourenco, Saeed Zeinolabedinzadeh, Adrian Ildefonso, Zachary E. Fleetwood, Christopher T. Coen, Ickhyun Song, Seungwoo Jung, Farzad Inanlou, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki, John D. Cressler

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity of the SiGe LNA is highly dependent on operating conditions and strike location. Time and frequency-domain analyses raise potential concerns for digital data modulated on RF carrier signals. Device and circuit-level ion-strike TCAD simulations are utilized to compare alternative simulation approaches, highlight the importance of parasitics on SET simulation accuracy, and suggest best practices for modeling radiation-induced transients within RF/mm-wave circuits.

Original languageEnglish (US)
Article number7407492
Pages (from-to)273-280
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number1
DOIs
StatePublished - Feb 1 2016
Externally publishedYes

Keywords

  • Charge collection
  • current injection
  • MixCAD
  • mixed mode
  • NanoTCAD
  • parasitics
  • radiation hardening
  • SiGe HBT
  • silicon-germanium technology
  • single-event effects (SEE)
  • single-event transient (SET)
  • two-photon absorption experiments

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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