An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy, Robert L. Schmid, Saeed Zeinolabedinzadeh, Wasif T. Khan, Mehmet Kaynak, Bernd Tillack, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.

Original languageEnglish (US)
Title of host publication2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages211-214
Number of pages4
ISBN (Electronic)9781479972302
DOIs
StatePublished - Dec 9 2014
Externally publishedYes
Event2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States
Duration: Sep 28 2014Oct 1 2014

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
CountryUnited States
CityCoronado
Period9/28/1410/1/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ulusoy, A. C., Schmid, R. L., Zeinolabedinzadeh, S., Khan, W. T., Kaynak, M., Tillack, B., & Cressler, J. D. (2014). An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 211-214). [6981317] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981317