An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy; Robert L. Schmid; Saeed Zeinolabedinzadeh; Wasif T. Khan; Mehmet Kaynak; Bernd Tillack; John D. Cressler

doi:10.1109/BCTM.2014.6981317

An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy, Robert L. Schmid, Saeed Zeinolabedinzadeh, Wasif T. Khan, Mehmet Kaynak, Bernd Tillack, John D. Cressler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (f_T) and the maximum frequency of oscillation (f_max) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high f_max. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an f_max of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest f_max reported at the top-metal level in any state-of-the-art silicon technology.

Original language	English (US)
Title of host publication	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	211-214
Number of pages	4
ISBN (Electronic)	9781479972302
DOIs	https://doi.org/10.1109/BCTM.2014.6981317
State	Published - Dec 9 2014
Externally published	Yes
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States Duration: Sep 28 2014 → Oct 1 2014

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/Territory	United States
City	Coronado
Period	9/28/14 → 10/1/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/BCTM.2014.6981317

Cite this

Ulusoy, A. C., Schmid, R. L., Zeinolabedinzadeh, S., Khan, W. T., Kaynak, M., Tillack, B., & Cressler, J. D. (2014). An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 211-214). Article 6981317 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981317

An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. / Ulusoy, A. Cagri; Schmid, Robert L.; Zeinolabedinzadeh, Saeed et al.
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 211-214 6981317 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ulusoy, AC, Schmid, RL, Zeinolabedinzadeh, S, Khan, WT, Kaynak, M, Tillack, B & Cressler, JD 2014, An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014., 6981317, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 211-214, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014, Coronado, United States, 9/28/14. https://doi.org/10.1109/BCTM.2014.6981317

Ulusoy AC, Schmid RL, Zeinolabedinzadeh S, Khan WT, Kaynak M, Tillack B et al. An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 211-214. 6981317. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2014.6981317

Ulusoy, A. Cagri ; Schmid, Robert L. ; Zeinolabedinzadeh, Saeed et al. / An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 211-214 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

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abstract = "In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.",

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AU - Ulusoy, A. Cagri

AU - Schmid, Robert L.

AU - Zeinolabedinzadeh, Saeed

AU - Khan, Wasif T.

AU - Kaynak, Mehmet

AU - Tillack, Bernd

AU - Cressler, John D.

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AB - In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.

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