An investigation of amorphous Ge2 Se3 structure for phase change memory devices using fluctuation electron microscopy

K. Jarvis, Ray Carpenter, M. Davis, K. A. Campbell

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Medium range order in amorphous thin films of Ge2 Se 3, a phase change memory material, was examined using electron nanodiffraction fluctuation electron microscopy. Variance measurements showed that medium range order existed at 0.36 and 0.58 Å-1L. The film was not at equilibrium and contained a few monoclinic nanocrystals with weak Bragg maxima at 0.33, 0.54, and 0.63 Å-1, which are related to the GeSe2 equilibrium phase at this composition. We also determined the variance for amorphous silicon (a-Si) and amorphous silica (a ?SiO2) and those results agree with others in the literature. It is expected that the medium range order is related to nucleation of the crystallization reaction in Ge2 Se3.

Original languageEnglish (US)
Article number083507
JournalJournal of Applied Physics
Volume106
Issue number8
DOIs
StatePublished - 2009

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electron microscopy
amorphous silicon
nanocrystals
nucleation
crystallization
silicon dioxide
thin films
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

An investigation of amorphous Ge2 Se3 structure for phase change memory devices using fluctuation electron microscopy. / Jarvis, K.; Carpenter, Ray; Davis, M.; Campbell, K. A.

In: Journal of Applied Physics, Vol. 106, No. 8, 083507, 2009.

Research output: Contribution to journalArticle

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