Abstract

A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.

Original languageEnglish (US)
Title of host publicationProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 2012
Event34th Annual Custom Integrated Circuits Conference, CICC 2012 - San Jose, CA, United States
Duration: Sep 9 2012Sep 12 2012

Other

Other34th Annual Custom Integrated Circuits Conference, CICC 2012
CountryUnited States
CitySan Jose, CA
Period9/9/129/12/12

Fingerprint

Electric potential
Rails
Compensation and Redress
System-on-chip

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lepkowski, W., Wilk, S. J., Ghajar, M. R., Bakkaloglu, B., & Thornton, T. (2012). An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. In Proceedings of the Custom Integrated Circuits Conference [6330634] https://doi.org/10.1109/CICC.2012.6330634

An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. / Lepkowski, William; Wilk, Seth J.; Ghajar, M. Reza; Bakkaloglu, Bertan; Thornton, Trevor.

Proceedings of the Custom Integrated Circuits Conference. 2012. 6330634.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lepkowski, W, Wilk, SJ, Ghajar, MR, Bakkaloglu, B & Thornton, T 2012, An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. in Proceedings of the Custom Integrated Circuits Conference., 6330634, 34th Annual Custom Integrated Circuits Conference, CICC 2012, San Jose, CA, United States, 9/9/12. https://doi.org/10.1109/CICC.2012.6330634
Lepkowski W, Wilk SJ, Ghajar MR, Bakkaloglu B, Thornton T. An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. In Proceedings of the Custom Integrated Circuits Conference. 2012. 6330634 https://doi.org/10.1109/CICC.2012.6330634
Lepkowski, William ; Wilk, Seth J. ; Ghajar, M. Reza ; Bakkaloglu, Bertan ; Thornton, Trevor. / An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. Proceedings of the Custom Integrated Circuits Conference. 2012.
@inproceedings{5bd1ab4424d14c99a7f49241b2d33eb0,
title = "An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications",
abstract = "A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.",
author = "William Lepkowski and Wilk, {Seth J.} and Ghajar, {M. Reza} and Bertan Bakkaloglu and Trevor Thornton",
year = "2012",
doi = "10.1109/CICC.2012.6330634",
language = "English (US)",
isbn = "9781467315555",
booktitle = "Proceedings of the Custom Integrated Circuits Conference",

}

TY - GEN

T1 - An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications

AU - Lepkowski, William

AU - Wilk, Seth J.

AU - Ghajar, M. Reza

AU - Bakkaloglu, Bertan

AU - Thornton, Trevor

PY - 2012

Y1 - 2012

N2 - A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.

AB - A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.

UR - http://www.scopus.com/inward/record.url?scp=84869379932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869379932&partnerID=8YFLogxK

U2 - 10.1109/CICC.2012.6330634

DO - 10.1109/CICC.2012.6330634

M3 - Conference contribution

AN - SCOPUS:84869379932

SN - 9781467315555

BT - Proceedings of the Custom Integrated Circuits Conference

ER -