Abstract

A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2012 Custom Integrated Circuits Conference, CICC 2012
DOIs
StatePublished - Nov 26 2012
Event34th Annual Custom Integrated Circuits Conference, CICC 2012 - San Jose, CA, United States
Duration: Sep 9 2012Sep 12 2012

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

Other34th Annual Custom Integrated Circuits Conference, CICC 2012
CountryUnited States
CitySan Jose, CA
Period9/9/129/12/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications'. Together they form a unique fingerprint.

  • Cite this

    Lepkowski, W., Wilk, S. J., Ghajar, M. R., Bakkaloglu, B., & Thornton, T. (2012). An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications. In Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, CICC 2012 [6330634] (Proceedings of the Custom Integrated Circuits Conference). https://doi.org/10.1109/CICC.2012.6330634