An insight into dislocation density reduction in multicrystalline silicon

Soobin Woo, Mariana Bertoni, Kwangmin Choi, Seungjin Nam, Sergio Castellanos, Douglas Michael Powell, Tonio Buonassisi, Hyunjoo Choi

Research output: Contribution to journalReview article

10 Scopus citations


Dislocations can severely limit the conversion efficiency of multicrystalline silicon (mc-Si) solar cells by reducing minority carrier lifetime. As cell performance becomes increasingly bulk lifetime-limited, the importance of dislocation engineering increases too. This study reviews the literature on mc-Si solar cells; it focuses on the (i) impact of dislocations on cell performance, (ii) dislocation diagnostic skills, and (iii) dislocation engineering techniques during and after crystal growth. The driving forces in dislocation density reduction are further discussed by examining the dependence of dislocation motion on temperature, intrinsic and applied stresses, and on other defects, such as vacancies and impurities.

Original languageEnglish (US)
Pages (from-to)88-100
Number of pages13
JournalSolar Energy Materials and Solar Cells
StatePublished - Oct 1 2016



  • Dislocation density
  • Dislocation engineering
  • Multicrystalline silicon
  • Pair-wise annihilation
  • Solar cells

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Woo, S., Bertoni, M., Choi, K., Nam, S., Castellanos, S., Powell, D. M., Buonassisi, T., & Choi, H. (2016). An insight into dislocation density reduction in multicrystalline silicon. Solar Energy Materials and Solar Cells, 155, 88-100.