Abstract

Mid-wave and long-wave infrared nBn photodetectors with absorbers consisting of InAs/InAsSb superlattices and barriers consisting of InAs/AlGaSb(As) superlattices were grown using molecular beam epitaxy. High-resolution X-ray diffraction showing significant differences in Ga composition in the barrier layer, and different dark current behavior at 77 K, suggested the possibility of different types of band alignments between the barrier layer and the absorber for the mid- and long-wave infrared samples. Examination of the barrier layers using off-axis electron holography showed the presence of positive charge with an estimated density of 1.8 × 10<sup>17</sup>/cm<sup>3</sup> in the mid-wave sample as a result of a type-II band alignment, whereas negligible charge was detected in the long-wave sample, consistent with a type-I band alignment.

Original languageEnglish (US)
Article number122109
JournalApplied Physics Letters
Volume107
Issue number12
DOIs
StatePublished - Sep 21 2015

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barrier layers
planetary waves
holography
photometers
alignment
superlattices
absorbers
electrons
dark current
molecular beam epitaxy
examination
high resolution
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography. / Shen, Xiao Meng; He, Zhao Yu; Liu, Shi; Lin, Zhi Yuan; Zhang, Yong-Hang; Smith, David; McCartney, Martha.

In: Applied Physics Letters, Vol. 107, No. 12, 122109, 21.09.2015.

Research output: Contribution to journalArticle

@article{5464064741044a2fab5ef3fbe9a926b6,
title = "An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography",
abstract = "Mid-wave and long-wave infrared nBn photodetectors with absorbers consisting of InAs/InAsSb superlattices and barriers consisting of InAs/AlGaSb(As) superlattices were grown using molecular beam epitaxy. High-resolution X-ray diffraction showing significant differences in Ga composition in the barrier layer, and different dark current behavior at 77 K, suggested the possibility of different types of band alignments between the barrier layer and the absorber for the mid- and long-wave infrared samples. Examination of the barrier layers using off-axis electron holography showed the presence of positive charge with an estimated density of 1.8 × 1017/cm3 in the mid-wave sample as a result of a type-II band alignment, whereas negligible charge was detected in the long-wave sample, consistent with a type-I band alignment.",
author = "Shen, {Xiao Meng} and He, {Zhao Yu} and Shi Liu and Lin, {Zhi Yuan} and Yong-Hang Zhang and David Smith and Martha McCartney",
year = "2015",
month = "9",
day = "21",
doi = "10.1063/1.4931938",
language = "English (US)",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography

AU - Shen, Xiao Meng

AU - He, Zhao Yu

AU - Liu, Shi

AU - Lin, Zhi Yuan

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

PY - 2015/9/21

Y1 - 2015/9/21

N2 - Mid-wave and long-wave infrared nBn photodetectors with absorbers consisting of InAs/InAsSb superlattices and barriers consisting of InAs/AlGaSb(As) superlattices were grown using molecular beam epitaxy. High-resolution X-ray diffraction showing significant differences in Ga composition in the barrier layer, and different dark current behavior at 77 K, suggested the possibility of different types of band alignments between the barrier layer and the absorber for the mid- and long-wave infrared samples. Examination of the barrier layers using off-axis electron holography showed the presence of positive charge with an estimated density of 1.8 × 1017/cm3 in the mid-wave sample as a result of a type-II band alignment, whereas negligible charge was detected in the long-wave sample, consistent with a type-I band alignment.

AB - Mid-wave and long-wave infrared nBn photodetectors with absorbers consisting of InAs/InAsSb superlattices and barriers consisting of InAs/AlGaSb(As) superlattices were grown using molecular beam epitaxy. High-resolution X-ray diffraction showing significant differences in Ga composition in the barrier layer, and different dark current behavior at 77 K, suggested the possibility of different types of band alignments between the barrier layer and the absorber for the mid- and long-wave infrared samples. Examination of the barrier layers using off-axis electron holography showed the presence of positive charge with an estimated density of 1.8 × 1017/cm3 in the mid-wave sample as a result of a type-II band alignment, whereas negligible charge was detected in the long-wave sample, consistent with a type-I band alignment.

UR - http://www.scopus.com/inward/record.url?scp=84942436742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942436742&partnerID=8YFLogxK

U2 - 10.1063/1.4931938

DO - 10.1063/1.4931938

M3 - Article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122109

ER -