An indirect impedance characterization method for monolithic double-slot antennas for THz sensors

Kagan Topalli, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present an indirect port-impedance characterization technique for monolithically manufactured THz antennas. Due to the exceedingly small geometrical details, standard contact-probe measurements cannot be carried out at the desired port locations. Alternatively, several contact-probe measurements are carried out at remote locations while the input port is terminated with standard loads. As such, the THz antenna is treated as a two-port network and the port impedance seen by a sensing diode can be analytically determined using standard S-parameter measurements. In particular, the diode port is replaced with three standard terminations (short, open, and a resistive load) and the measured S11 data is used to indirectly compute port impedance seen by the sensor. The initial results show that this approach provides accurate estimates of the antenna impedance, with possible exceptions when the electrical length between the two ports is close to an integer multiple of half wavelength.

Original languageEnglish (US)
Title of host publication2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011 - Istanbul, Turkey
Duration: Aug 13 2011Aug 20 2011

Other

Other2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011
CountryTurkey
CityIstanbul
Period8/13/118/20/11

Fingerprint

Slot antennas
Sensors
Antennas
Diodes
Scattering parameters
Wavelength

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Topalli, K., Trichopoulos, G., & Sertel, K. (2011). An indirect impedance characterization method for monolithic double-slot antennas for THz sensors. In 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011 [6050341] https://doi.org/10.1109/URSIGASS.2011.6050341

An indirect impedance characterization method for monolithic double-slot antennas for THz sensors. / Topalli, Kagan; Trichopoulos, Georgios; Sertel, Kubilay.

2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011. 2011. 6050341.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Topalli, K, Trichopoulos, G & Sertel, K 2011, An indirect impedance characterization method for monolithic double-slot antennas for THz sensors. in 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011., 6050341, 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011, Istanbul, Turkey, 8/13/11. https://doi.org/10.1109/URSIGASS.2011.6050341
Topalli K, Trichopoulos G, Sertel K. An indirect impedance characterization method for monolithic double-slot antennas for THz sensors. In 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011. 2011. 6050341 https://doi.org/10.1109/URSIGASS.2011.6050341
Topalli, Kagan ; Trichopoulos, Georgios ; Sertel, Kubilay. / An indirect impedance characterization method for monolithic double-slot antennas for THz sensors. 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011. 2011.
@inproceedings{625fbcbdaa914622b1b5347637cf7487,
title = "An indirect impedance characterization method for monolithic double-slot antennas for THz sensors",
abstract = "We present an indirect port-impedance characterization technique for monolithically manufactured THz antennas. Due to the exceedingly small geometrical details, standard contact-probe measurements cannot be carried out at the desired port locations. Alternatively, several contact-probe measurements are carried out at remote locations while the input port is terminated with standard loads. As such, the THz antenna is treated as a two-port network and the port impedance seen by a sensing diode can be analytically determined using standard S-parameter measurements. In particular, the diode port is replaced with three standard terminations (short, open, and a resistive load) and the measured S11 data is used to indirectly compute port impedance seen by the sensor. The initial results show that this approach provides accurate estimates of the antenna impedance, with possible exceptions when the electrical length between the two ports is close to an integer multiple of half wavelength.",
author = "Kagan Topalli and Georgios Trichopoulos and Kubilay Sertel",
year = "2011",
doi = "10.1109/URSIGASS.2011.6050341",
language = "English (US)",
isbn = "9781424451173",
booktitle = "2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011",

}

TY - GEN

T1 - An indirect impedance characterization method for monolithic double-slot antennas for THz sensors

AU - Topalli, Kagan

AU - Trichopoulos, Georgios

AU - Sertel, Kubilay

PY - 2011

Y1 - 2011

N2 - We present an indirect port-impedance characterization technique for monolithically manufactured THz antennas. Due to the exceedingly small geometrical details, standard contact-probe measurements cannot be carried out at the desired port locations. Alternatively, several contact-probe measurements are carried out at remote locations while the input port is terminated with standard loads. As such, the THz antenna is treated as a two-port network and the port impedance seen by a sensing diode can be analytically determined using standard S-parameter measurements. In particular, the diode port is replaced with three standard terminations (short, open, and a resistive load) and the measured S11 data is used to indirectly compute port impedance seen by the sensor. The initial results show that this approach provides accurate estimates of the antenna impedance, with possible exceptions when the electrical length between the two ports is close to an integer multiple of half wavelength.

AB - We present an indirect port-impedance characterization technique for monolithically manufactured THz antennas. Due to the exceedingly small geometrical details, standard contact-probe measurements cannot be carried out at the desired port locations. Alternatively, several contact-probe measurements are carried out at remote locations while the input port is terminated with standard loads. As such, the THz antenna is treated as a two-port network and the port impedance seen by a sensing diode can be analytically determined using standard S-parameter measurements. In particular, the diode port is replaced with three standard terminations (short, open, and a resistive load) and the measured S11 data is used to indirectly compute port impedance seen by the sensor. The initial results show that this approach provides accurate estimates of the antenna impedance, with possible exceptions when the electrical length between the two ports is close to an integer multiple of half wavelength.

UR - http://www.scopus.com/inward/record.url?scp=81255173118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81255173118&partnerID=8YFLogxK

U2 - 10.1109/URSIGASS.2011.6050341

DO - 10.1109/URSIGASS.2011.6050341

M3 - Conference contribution

AN - SCOPUS:81255173118

SN - 9781424451173

BT - 2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011

ER -