An in-plane high-sensitivity, low-noise micro-g silicon accelerometer

Junseok Chae, Haluk Kulah, Khalil Najafi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations

Abstract

A high-sensitivity, low-noise in-plane capacitive micro-accelerometer utilizing a combined bulk and surface micromachining technology is demonstrated. The accelerometer utilizes a 0.5mm-thick, 2.4mm×1.0mm proofmass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass through a 1.1μm sensing gap that is formed using a sacrificial oxide layer. The measured sensitivity of the device is 5.6pF/g and the output noise floor of the accelerometer hybrid assembled with CMOS interface circuit is 1.6μg/√Hz in atmosphere.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Pages466-469
Number of pages4
StatePublished - 2003
Externally publishedYes
EventIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems - Kyoto, Japan
Duration: Jan 19 2003Jan 23 2003

Other

OtherIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems
CountryJapan
CityKyoto
Period1/19/031/23/03

Keywords

  • μg accelerometer
  • Inertial sensors
  • Sigma-delta

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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  • Cite this

    Chae, J., Kulah, H., & Najafi, K. (2003). An in-plane high-sensitivity, low-noise micro-g silicon accelerometer. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 466-469)