An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges

Engineering & Materials Science

• Surface potential 100%
• Oxides 63%
• Drain current 37%
• Analytical models 25%
• Gate dielectrics 20%
• Poisson equation 18%
• Defects 10%

Chemical Compounds

• Surface Potential 80%
• Potential Equation 55%
• Drain Current 45%
• Oxide 39%
• Interface Trap 24%
• Dielectric Material 12%
• Simulation 9%

Physics & Astronomy

• field effect transistors 57%
• oxides 45%
• Poisson equation 13%
• depletion 10%
• inversions 9%
• traps 9%
• defects 6%
• curves 6%
• simulation 4%