An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges

Ian P. Livingston, Ivan S. Esqueda, Hugh J. Barnaby

Research output: Contribution to journalArticlepeer-review

Abstract

We present analytical models for calculating surface potential for both undoped (intrinsic) and doped (extrinsic) long channel symmetric double-gate MOSFETs. Starting with Poisson's equation, we derive the implicit surface potential equation(s) for the symmetric double-gate MOSFET in the accumulation and depletion/inversion regions of operation. This results in a continuous surface potential curve throughout all operating regions of the device. By introducing a defect potential to surface potential equations for the symmetric double-gate MOSFET, the models add the effects of oxide-trapped charge and interface traps (both uniform and non-uniform distributions) that can build up in the gate dielectric of the device. A drain current model is presented for both the undoped and doped cases of the SDG MOSFET. The accuracy of the surface potential analytical models and drain current models are validated by comparing to numerical results from two dimensional TCAD simulations.

Original languageEnglish (US)
Article number108193
JournalSolid-State Electronics
Volume187
DOIs
StatePublished - Jan 2022

Keywords

  • Interface traps
  • Oxide-trapped charge
  • Surface potential modeling
  • Symmetric double-gate MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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