An extended finite element method for dislocations in layered materials and heterostructures

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents recent advances in modeling dislocations in complex geometries, anisotropic materials, and material interfaces with the extended finite element method. In this method, dislocations are modeled as discontinuities in the displacement field imposed over glide surfaces. The discontinuities are explicitly included in the simulation in the form of discontinuous enrichment functions using the extended finite element method. Several examples, including simulations of dislocation networks in quantum dots and thin films, are presented to show the effectiveness of this method for problems relevant to the analysis of dislocation formation in nano- and micro-electronic devices.

Original languageEnglish (US)
Title of host publicationIMAPS International Conference and Exhibition on Device Packaging, DPC 2012 - In Conjunction with the Global Business Council, GBC 2012 Spring Conference
Pages308-311
Number of pages4
Publication statusPublished - 2012
Event8th Annual IMAPS International Conference and Exhibition on Device Packaging, DPC 2012 - In Conjunction with the Global Business Council, GBC 2012 Spring Conference - Scottsdale/Fountain Hills, AZ, United States
Duration: Mar 5 2012Mar 8 2012

Other

Other8th Annual IMAPS International Conference and Exhibition on Device Packaging, DPC 2012 - In Conjunction with the Global Business Council, GBC 2012 Spring Conference
CountryUnited States
CityScottsdale/Fountain Hills, AZ
Period3/5/123/8/12

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Oswald, J. (2012). An extended finite element method for dislocations in layered materials and heterostructures. In IMAPS International Conference and Exhibition on Device Packaging, DPC 2012 - In Conjunction with the Global Business Council, GBC 2012 Spring Conference (pp. 308-311)