Abstract

The high-field transport of electrons in β-SiC is investigated by use of an ensemble Monte Carlo technique. We consider scattering by acoustic deformation potential, polar optical phonon, two different equivalent intervalley phonons (one first-order and one zero-order interaction), impurity scattering and impact ionization. The intervalley coupling constants and deformation potential constant are estimated by fitting the ohmic mobility to the measured experimental values over the temperature range 50-1000 K. Polar runaway occurs above 5 × 105 V/cm. The distribution can be partially stabilized by impact ionization processes, but the runaway is still observed. For a nonparabolic band model, the drift velocity has a gentle peak around 4 × 105 V/cm. The peak value is 1.9 × 107 cm/s, which is comparable to the experimental value observed in 6H-SiC (2.1 × 107 cm/s).

Original languageEnglish (US)
Pages (from-to)466-470
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
StatePublished - 1993

Fingerprint

Impact ionization
Scattering
ionization
Phonons
scattering
phonons
Acoustics
Impurities
impurities
acoustics
Electrons
electrons
interactions
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

An ensemble Monte Carlo study of high-field transport in β-SiC. / Tsukioka, K.; Vasileska, Dragica; Ferry, D. K.

In: Physica B: Physics of Condensed Matter, Vol. 185, No. 1-4, 1993, p. 466-470.

Research output: Contribution to journalArticle

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