@inproceedings{4fd0181208f140228199e08b711a1356,
title = "An effective potential method for including quantum effects into the simulation of ultra-short and ultra-narrow channel MOSFETs",
abstract = "Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the Schr{\"o}dinger and Poisson equations, which can be a very time consuming procedure if it needs to be incorporated in realistic device simulations. We have developed a simple and very efficient approach of approximating quantum effects by using an effective potential that takes into account the natural non-zero size of an electron wave packet in the quantized system. The benefits of the effective potential approach are that it eliminates the need for a full solution to the Schr{\"o}dinger equation, thus leading to low additional computational cost. In this paper, the approach is applied in the investigation of the role of quantum-mechanical space-quantization effects in the operation of 0.1 μm MOSFET device and recently proposed SOI device structure.",
keywords = "Monte Carlo simulation, Quantization, SOI devices, Ultra-small MOSFETs",
author = "Richard Akis and Milicic, {Srdjan N.} and Ferry, {David K.} and Dragica Vasileska",
year = "2001",
language = "English (US)",
isbn = "0970827504",
series = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001",
pages = "550--553",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001",
note = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 ; Conference date: 19-03-2001 Through 21-03-2001",
}