An effective potential method for including quantum effects into the simulation of ultra-short and ultra-narrow channel MOSFETs

Richard Akis, Srdjan N. Milicic, David K. Ferry, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the Schrödinger and Poisson equations, which can be a very time consuming procedure if it needs to be incorporated in realistic device simulations. We have developed a simple and very efficient approach of approximating quantum effects by using an effective potential that takes into account the natural non-zero size of an electron wave packet in the quantized system. The benefits of the effective potential approach are that it eliminates the need for a full solution to the Schrödinger equation, thus leading to low additional computational cost. In this paper, the approach is applied in the investigation of the role of quantum-mechanical space-quantization effects in the operation of 0.1 μm MOSFET device and recently proposed SOI device structure.

Original languageEnglish (US)
Title of host publication2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
EditorsM. Laudon, B. Romanowicz
Pages550-553
Number of pages4
StatePublished - Dec 1 2001
Event2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 - Hilton Head Island, SC, United States
Duration: Mar 19 2001Mar 21 2001

Publication series

Name2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Other

Other2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
CountryUnited States
CityHilton Head Island, SC
Period3/19/013/21/01

Keywords

  • Monte Carlo simulation
  • Quantization
  • SOI devices
  • Ultra-small MOSFETs

ASJC Scopus subject areas

  • Engineering(all)

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    Akis, R., Milicic, S. N., Ferry, D. K., & Vasileska, D. (2001). An effective potential method for including quantum effects into the simulation of ultra-short and ultra-narrow channel MOSFETs. In M. Laudon, & B. Romanowicz (Eds.), 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (pp. 550-553). (2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001).