An Effective Potential Approach to Modeling 25 nm MOSFET Devices

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

Original languageEnglish (US)
Pages (from-to)113-117
Number of pages5
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - Dec 1 2003

Fingerprint

MOSFET
Boltzmann equation
Effective Potential
MOSFET devices
Semiconductor devices
Oxides
field effect transistors
Thermodynamics
Electrons
Semiconductor Device Simulation
semiconductor devices
Modeling
Modified Equations
Boltzmann Equation
thermodynamics
oxides
Electron
electrons
simulation
interactions

Keywords

  • effective potentials
  • quantum thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

An Effective Potential Approach to Modeling 25 nm MOSFET Devices. / Ahmed, S.; Ringhofer, Christian; Vasileska, Dragica.

In: Journal of Computational Electronics, Vol. 2, No. 2-4, 01.12.2003, p. 113-117.

Research output: Contribution to journalArticle

@article{44b330cb67764c63bc35286e370d127b,
title = "An Effective Potential Approach to Modeling 25 nm MOSFET Devices",
abstract = "We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.",
keywords = "effective potentials, quantum thermodynamics",
author = "S. Ahmed and Christian Ringhofer and Dragica Vasileska",
year = "2003",
month = "12",
day = "1",
doi = "10.1023/B:JCEL.0000011409.76632.70",
language = "English (US)",
volume = "2",
pages = "113--117",
journal = "Journal of Computational Electronics",
issn = "1569-8025",
publisher = "Springer Netherlands",
number = "2-4",

}

TY - JOUR

T1 - An Effective Potential Approach to Modeling 25 nm MOSFET Devices

AU - Ahmed, S.

AU - Ringhofer, Christian

AU - Vasileska, Dragica

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

AB - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

KW - effective potentials

KW - quantum thermodynamics

UR - http://www.scopus.com/inward/record.url?scp=9644301575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9644301575&partnerID=8YFLogxK

U2 - 10.1023/B:JCEL.0000011409.76632.70

DO - 10.1023/B:JCEL.0000011409.76632.70

M3 - Article

VL - 2

SP - 113

EP - 117

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 2-4

ER -