An Effective Potential Approach to Modeling 25 nm MOSFET Devices

S. Ahmed; C. Ringhofer; D. Vasileska

doi:10.1023/B:JCEL.0000011409.76632.70

An Effective Potential Approach to Modeling 25 nm MOSFET Devices

S. Ahmed, C. Ringhofer, D. Vasileska

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

Original language	English (US)
Pages (from-to)	113-117
Number of pages	5
Journal	Journal of Computational Electronics
Volume	2
Issue number	2-4
DOIs	https://doi.org/10.1023/B:JCEL.0000011409.76632.70
State	Published - Dec 1 2003

Keywords

effective potentials
quantum thermodynamics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

Access to Document

10.1023/B:JCEL.0000011409.76632.70

Cite this

@article{44b330cb67764c63bc35286e370d127b,

title = "An Effective Potential Approach to Modeling 25 nm MOSFET Devices",

abstract = "We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.",

keywords = "effective potentials, quantum thermodynamics",

author = "S. Ahmed and C. Ringhofer and D. Vasileska",

note = "Publisher Copyright: {\textcopyright} 2003, Kluwer Academic Publishers.",

year = "2003",

month = dec,

day = "1",

doi = "10.1023/B:JCEL.0000011409.76632.70",

language = "English (US)",

volume = "2",

pages = "113--117",

journal = "Journal of Computational Electronics",

issn = "1569-8025",

publisher = "Springer Netherlands",

number = "2-4",

}

TY - JOUR

T1 - An Effective Potential Approach to Modeling 25 nm MOSFET Devices

AU - Ahmed, S.

AU - Ringhofer, C.

AU - Vasileska, D.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

AB - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

KW - effective potentials

KW - quantum thermodynamics

UR - http://www.scopus.com/inward/record.url?scp=9644301575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9644301575&partnerID=8YFLogxK

U2 - 10.1023/B:JCEL.0000011409.76632.70

DO - 10.1023/B:JCEL.0000011409.76632.70

M3 - Article

AN - SCOPUS:9644301575

SN - 1569-8025

VL - 2

SP - 113

EP - 117

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

IS - 2-4

ER -

An Effective Potential Approach to Modeling 25 nm MOSFET Devices

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this