Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

Original languageEnglish (US)
Pages (from-to)197-200
Number of pages4
JournalJournal of Computational Electronics
Volume8
Issue number3-4
StatePublished - Dec 1 2009

Keywords

  • Effective potentials
  • MOSFET quantum effects
  • Monte carlo simulation
  • Quantum thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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