A new optoelectronic microwave switching device is described. The device is composed of a semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low- and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - May 1979|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering