An Avalanching Optoelectronic Microwave Switch

Richard A. Kiehl

doi:10.1109/TMTT.1979.1129663

An Avalanching Optoelectronic Microwave Switch

Richard A. Kiehl

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A new optoelectronic microwave switching device is described. The device is composed of a semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low- and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed.

Original language	English (US)
Pages (from-to)	533-539
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/TMTT.1979.1129663
State	Published - May 1979
Externally published	Yes

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.1979.1129663

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abstract = "A new optoelectronic microwave switching device is described. The device is composed of a semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low- and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed.",

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AB - A new optoelectronic microwave switching device is described. The device is composed of a semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low- and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed.

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An Avalanching Optoelectronic Microwave Switch

Abstract

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