An area and power efficient radiation hardened by design flip-flop

Jonathan E. Knudsen, Lawrence T. Clark

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

A radiation hardened by design flip-flop with high single event effect immunity is described. Circuit size and power are reduced by a combination of proven SEE hard techniques, i.e., a temporal latch master and DICE slave are used. Two shift register chains each comprised of 1920 flip-flops have been implemented in the IBM 0.13 μm bulk CMOS process. Measured SEE immunity in accelerated heavy ion testing, and power results are described. A threshold LET over 45 LET (MeV-cm2/mg) at YDD = 1.5 V is demonstrated. High layout density and the likely high LET failure mechanisms are described.

Original languageEnglish (US)
Pages (from-to)3392-3399
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
StatePublished - Dec 1 2006

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Keywords

  • Flip-flop
  • Radiation hardened by design
  • Sequential logic circuits
  • Single event effects
  • Single event transients

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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