An area and power efficient radiation hardened by design flip-flop

Jonathan E. Knudsen, Lawrence T. Clark

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

A radiation hardened by design flip-flop with high single event effect immunity is described. Circuit size and power are reduced by a combination of proven SEE hard techniques, i.e., a temporal latch master and DICE slave are used. Two shift register chains each comprised of 1920 flip-flops have been implemented in the IBM 0.13 μm bulk CMOS process. Measured SEE immunity in accelerated heavy ion testing, and power results are described. A threshold LET over 45 LET (MeV-cm2/mg) at YDD = 1.5 V is demonstrated. High layout density and the likely high LET failure mechanisms are described.

Original languageEnglish (US)
Pages (from-to)3392-3399
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
StatePublished - Dec 2006

Fingerprint

programming environments
flip-flops
Flip flop circuits
immunity
latches
shift registers
Radiation
Shift registers
radiation
Heavy ions
layouts
CMOS
heavy ions
thresholds
Networks (circuits)
Testing

Keywords

  • Flip-flop
  • Radiation hardened by design
  • Sequential logic circuits
  • Single event effects
  • Single event transients

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

An area and power efficient radiation hardened by design flip-flop. / Knudsen, Jonathan E.; Clark, Lawrence T.

In: IEEE Transactions on Nuclear Science, Vol. 53, No. 6, 12.2006, p. 3392-3399.

Research output: Contribution to journalArticle

Knudsen, Jonathan E. ; Clark, Lawrence T. / An area and power efficient radiation hardened by design flip-flop. In: IEEE Transactions on Nuclear Science. 2006 ; Vol. 53, No. 6. pp. 3392-3399.
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