An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

K. L. Hess, P. D. Dapkus, H. M. Manasevit, T. S. Low, B. J. Skromme, G. E. Stillman

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

An analytical study of the impurities in trimethylgallium (TMGa) and subsequent correlation of the effect of these impurities on resulting GaAs films grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of using fractional distillation techniques to improve the quality of TMGa and to help isolate and identify major source impurities in TMGa is detailed. Photothermal ionization data are presented which show the residual donor species present and their relative concentrations in the epitaxial layers. Correlations of the residual donor concentrations with TMGa preparation are made. It is demonstrated that high purity GaAs with μ77 K ≈ 125,000 cm2/V-sec can be grown by MOCVD using repurified trimethylgallium and arsine source materials.

Original languageEnglish (US)
Pages (from-to)1115-1137
Number of pages23
JournalJournal of Electronic Materials
Volume11
Issue number6
DOIs
StatePublished - Nov 1 1982
Externally publishedYes

Keywords

  • epitaxial growth
  • fractional distillation
  • gallium arsenide
  • metalorganic chemical vapor deposition
  • photoluminescence
  • photothermal ionization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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