An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Chemical Compounds

• Radiative Recombination 100%
• Deep Defect Level 59%
• LO Phonon 56%
• Deep Level Transient Spectroscopy 55%
• Photoluminescence 50%
• Plasmon 37%
• Semiconductor 24%

Engineering & Materials Science

• Heterojunctions 85%
• Defects 44%
• Photoluminescence 35%
• Quantum efficiency 33%
• Deep level transient spectroscopy 19%
• Plasmons 19%
• Phonons 17%
• Carrier concentration 15%
• Semiconductor materials 9%
• Characterization (materials science) 9%
• Electric potential 5%

Physics & Astronomy

• radiative recombination 73%
• defects 36%
• minority carriers 34%
• majority carriers 27%
• occupation 22%
• quantum efficiency 19%
• photoluminescence 15%
• absorption cross sections 10%
• excitation 10%
• coupled modes 10%
• plasmons 8%
• phonons 7%
• characterization 6%
• electric potential 5%
• spectroscopy 5%