TY - GEN
T1 - Amorphous silicon/crystalline silicon heterojunction solar cells-Analysis of lateral conduction through the inversion layer
AU - Filipic, Miha
AU - Holman, Zachary
AU - Smole, Franc
AU - De Wolf, Stefaan
AU - Ballif, Christophe
AU - Topic, Marko
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We examine the contribution of the inversion layer, present at the amorphous silicon/crystalline silicon interface, to the lateral conduction of photogenerated charge carriers. We employ numerical simulation and experiments to determine if this layer can be exploited to replace the transparent conductive oxide layer (TCO). We found that current collection is constant when the TCO is present, but carriers can only travel a few hundred μm when the TCO is omitted. Simulations predict that increasing the valence band offset increases the conductivity of the inversion layer.
AB - We examine the contribution of the inversion layer, present at the amorphous silicon/crystalline silicon interface, to the lateral conduction of photogenerated charge carriers. We employ numerical simulation and experiments to determine if this layer can be exploited to replace the transparent conductive oxide layer (TCO). We found that current collection is constant when the TCO is present, but carriers can only travel a few hundred μm when the TCO is omitted. Simulations predict that increasing the valence band offset increases the conductivity of the inversion layer.
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U2 - 10.1109/MIEL.2014.6842128
DO - 10.1109/MIEL.2014.6842128
M3 - Conference contribution
AN - SCOPUS:84904651843
SN - 9781479952960
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 227
EP - 230
BT - 2014 29th International Conference on Microelectronics, MIEL 2014 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 29th International Conference on Microelectronics, MIEL 2014
Y2 - 12 May 2014 through 14 May 2014
ER -