Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays

Alex Z. Kattamis, I. Chun Cheng, Ke Long, Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James C. Sturm, Sameer M. Venugopal, Douglas E. Loy, Shawn M. O'Rourke, David Allee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200 °C. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150 °C. The substrate was dimensionally stable within the measurement resolution of 1 μm, allowing for well-aligned 8 × 8 and 32 × 32 arrays of 500 μm × 500 μm pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil.

Original languageEnglish (US)
Pages (from-to)304-308
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume3
Issue number3
DOIs
StatePublished - Sep 2007

Fingerprint

Electrophoretic displays
Thin film transistors
Amorphous silicon
laminates
amorphous silicon
transistors
plastics
Plastics
Substrates
thin films
Glass
glass
Metal foil
foils
Pixels
pixels
Temperature

Keywords

  • Amorphous silicon thin-film transistor (a-Si:H TFT)
  • Clear plastic
  • Electrophoretic display
  • Flexible
  • Stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays. / Kattamis, Alex Z.; Cheng, I. Chun; Long, Ke; Hekmatshoar, Bahman; Cherenack, Kunigunde H.; Wagner, Sigurd; Sturm, James C.; Venugopal, Sameer M.; Loy, Douglas E.; O'Rourke, Shawn M.; Allee, David.

In: IEEE/OSA Journal of Display Technology, Vol. 3, No. 3, 09.2007, p. 304-308.

Research output: Contribution to journalArticle

Kattamis, AZ, Cheng, IC, Long, K, Hekmatshoar, B, Cherenack, KH, Wagner, S, Sturm, JC, Venugopal, SM, Loy, DE, O'Rourke, SM & Allee, D 2007, 'Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays', IEEE/OSA Journal of Display Technology, vol. 3, no. 3, pp. 304-308. https://doi.org/10.1109/JDT.2007.900935
Kattamis, Alex Z. ; Cheng, I. Chun ; Long, Ke ; Hekmatshoar, Bahman ; Cherenack, Kunigunde H. ; Wagner, Sigurd ; Sturm, James C. ; Venugopal, Sameer M. ; Loy, Douglas E. ; O'Rourke, Shawn M. ; Allee, David. / Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays. In: IEEE/OSA Journal of Display Technology. 2007 ; Vol. 3, No. 3. pp. 304-308.
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