5 Citations (Scopus)

Abstract

A 5-bit fully flash A/D converter (ADC) is built using only n-channel amorphous silicon hydride (a-Si:H) thin film transistors (TFT), metal resistors and capacitors. The circuit is built on silicon using a low temperature process, compatible with flexible plastic substrates. The circuit consumes a power of 13.6 mW running at a speed of 2 k samples/sec. The measurements show reasonably good characteristics, achieving a DNL of less than ±1 LSB and INL of less than ±1.8 LSB without calibration.

Original languageEnglish (US)
Title of host publicationProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 2012
Event34th Annual Custom Integrated Circuits Conference, CICC 2012 - San Jose, CA, United States
Duration: Sep 9 2012Sep 12 2012

Other

Other34th Annual Custom Integrated Circuits Conference, CICC 2012
CountryUnited States
CitySan Jose, CA
Period9/9/129/12/12

Fingerprint

Digital to analog conversion
Amorphous silicon
Networks (circuits)
Thin film transistors
Silanes
Resistors
Capacitors
Calibration
Plastics
Silicon
Substrates
Metals
Temperature

Keywords

  • a-Si:H
  • DAC
  • DNL
  • INL
  • PECVD
  • PEN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dey, A., & Allee, D. (2012). Amorphous silicon 5 bit flash analog to digital converter. In Proceedings of the Custom Integrated Circuits Conference [6330647] https://doi.org/10.1109/CICC.2012.6330647

Amorphous silicon 5 bit flash analog to digital converter. / Dey, Aritra; Allee, David.

Proceedings of the Custom Integrated Circuits Conference. 2012. 6330647.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dey, A & Allee, D 2012, Amorphous silicon 5 bit flash analog to digital converter. in Proceedings of the Custom Integrated Circuits Conference., 6330647, 34th Annual Custom Integrated Circuits Conference, CICC 2012, San Jose, CA, United States, 9/9/12. https://doi.org/10.1109/CICC.2012.6330647
Dey A, Allee D. Amorphous silicon 5 bit flash analog to digital converter. In Proceedings of the Custom Integrated Circuits Conference. 2012. 6330647 https://doi.org/10.1109/CICC.2012.6330647
Dey, Aritra ; Allee, David. / Amorphous silicon 5 bit flash analog to digital converter. Proceedings of the Custom Integrated Circuits Conference. 2012.
@inproceedings{fda9152398df4262bf185e7259ee721a,
title = "Amorphous silicon 5 bit flash analog to digital converter",
abstract = "A 5-bit fully flash A/D converter (ADC) is built using only n-channel amorphous silicon hydride (a-Si:H) thin film transistors (TFT), metal resistors and capacitors. The circuit is built on silicon using a low temperature process, compatible with flexible plastic substrates. The circuit consumes a power of 13.6 mW running at a speed of 2 k samples/sec. The measurements show reasonably good characteristics, achieving a DNL of less than ±1 LSB and INL of less than ±1.8 LSB without calibration.",
keywords = "a-Si:H, DAC, DNL, INL, PECVD, PEN",
author = "Aritra Dey and David Allee",
year = "2012",
doi = "10.1109/CICC.2012.6330647",
language = "English (US)",
isbn = "9781467315555",
booktitle = "Proceedings of the Custom Integrated Circuits Conference",

}

TY - GEN

T1 - Amorphous silicon 5 bit flash analog to digital converter

AU - Dey, Aritra

AU - Allee, David

PY - 2012

Y1 - 2012

N2 - A 5-bit fully flash A/D converter (ADC) is built using only n-channel amorphous silicon hydride (a-Si:H) thin film transistors (TFT), metal resistors and capacitors. The circuit is built on silicon using a low temperature process, compatible with flexible plastic substrates. The circuit consumes a power of 13.6 mW running at a speed of 2 k samples/sec. The measurements show reasonably good characteristics, achieving a DNL of less than ±1 LSB and INL of less than ±1.8 LSB without calibration.

AB - A 5-bit fully flash A/D converter (ADC) is built using only n-channel amorphous silicon hydride (a-Si:H) thin film transistors (TFT), metal resistors and capacitors. The circuit is built on silicon using a low temperature process, compatible with flexible plastic substrates. The circuit consumes a power of 13.6 mW running at a speed of 2 k samples/sec. The measurements show reasonably good characteristics, achieving a DNL of less than ±1 LSB and INL of less than ±1.8 LSB without calibration.

KW - a-Si:H

KW - DAC

KW - DNL

KW - INL

KW - PECVD

KW - PEN

UR - http://www.scopus.com/inward/record.url?scp=84869403807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869403807&partnerID=8YFLogxK

U2 - 10.1109/CICC.2012.6330647

DO - 10.1109/CICC.2012.6330647

M3 - Conference contribution

AN - SCOPUS:84869403807

SN - 9781467315555

BT - Proceedings of the Custom Integrated Circuits Conference

ER -