TY - JOUR
T1 - Ammonothermal growth of high-quality GaN crystals on HVPE template seeds
AU - Wang, Buguo
AU - Bliss, David
AU - Suscavage, Michael
AU - Swider, Stacy
AU - Lancto, Robert
AU - Lynch, Candace
AU - Weyburne, David
AU - Li, Ti
AU - Ponce, Fernando
N1 - Funding Information:
The work in AFRL and SSSC was partially funded by the Air Force Office of Scientific Research (Dr. Kitt Reinhardt, Program Manager). We especially thank Dr. Qing Sun-Paduano for X-ray diffraction and fruitful discussions, and Capt Wayne Eikenberry for photoluminescence measurements. The enormous support from Mr. Joe Lorenzo, Mr. Cal Yapp, and Mr. George Bryant during this research is also appreciated.
PY - 2011/3/1
Y1 - 2011/3/1
N2 - High quality GaN crystals have been successfully grown by the ammonothermal method in alkaline ammonia solutions using hydride vapor phase epitaxy (HVPE) seeds. The grown crystals, over 1 mm thick, are clear and possess excellent structural and optical properties. The crystalline structure of the as-grown bulk GaN is as good as, or better than the HVPE seeds as measured by high resolution X-ray rocking curves with 100 arcsec of full width at half maximum (FWHM) on (0 0 2) and 90 arcsec on (1 0 2) diffractions. The crystal quality is improved through a process of careful seed selection and controlled heating during nucleation, so that the ammonothermal growth replicates the seed crystals on both the nitrogen and gallium faces. The results are confirmed by low temperature photoluminescence spectra resolving donor-bound and free excitons as well as multiple phonon replicas, and further by room temperature cathodoluminescence indicating reduced yellow-band emission. Successful growth of high quality GaN crystals on HVPE seeds will facilitate the scale-up to large area growth by use of large area GaN HVPE templates as seeds.
AB - High quality GaN crystals have been successfully grown by the ammonothermal method in alkaline ammonia solutions using hydride vapor phase epitaxy (HVPE) seeds. The grown crystals, over 1 mm thick, are clear and possess excellent structural and optical properties. The crystalline structure of the as-grown bulk GaN is as good as, or better than the HVPE seeds as measured by high resolution X-ray rocking curves with 100 arcsec of full width at half maximum (FWHM) on (0 0 2) and 90 arcsec on (1 0 2) diffractions. The crystal quality is improved through a process of careful seed selection and controlled heating during nucleation, so that the ammonothermal growth replicates the seed crystals on both the nitrogen and gallium faces. The results are confirmed by low temperature photoluminescence spectra resolving donor-bound and free excitons as well as multiple phonon replicas, and further by room temperature cathodoluminescence indicating reduced yellow-band emission. Successful growth of high quality GaN crystals on HVPE seeds will facilitate the scale-up to large area growth by use of large area GaN HVPE templates as seeds.
KW - A1. HVPE seed
KW - A2. Crystal growth
KW - A2. The ammonothermal technique
KW - B1. Bulk GaN
KW - B2. Characterization
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U2 - 10.1016/j.jcrysgro.2010.10.080
DO - 10.1016/j.jcrysgro.2010.10.080
M3 - Article
AN - SCOPUS:79952738789
SN - 0022-0248
VL - 318
SP - 1030
EP - 1033
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -