TY - GEN
T1 - Aluminum thermo-compression bonding characterization
AU - Cakmak, E.
AU - Dragoi, V.
AU - Pabo, E.
AU - Matthias, T.
AU - Alford, Terry
PY - 2010
Y1 - 2010
N2 - Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.
AB - Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.
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M3 - Conference contribution
AN - SCOPUS:77955944970
SN - 9781605111957
T3 - Materials Research Society Symposium Proceedings
SP - 167
EP - 172
BT - Microelectromechanical Systems - Materials and Devices III
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 2 December 2009
ER -