Abstract

Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages167-172
Number of pages6
Volume1222
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/2/09

Fingerprint

Aluminum
aluminum
wafers
Noble Gases
Wafer bonding
Bending tests
Inert gases
Temperature
MEMS
Surface treatment
surface treatment
gases
integrity
Adhesion
microelectromechanical systems
temperature
rare gases
adhesion
manufacturing
Scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Cakmak, E., Dragoi, V., Pabo, E., Matthias, T., & Alford, T. (2010). Aluminum thermo-compression bonding characterization. In Materials Research Society Symposium Proceedings (Vol. 1222, pp. 167-172)

Aluminum thermo-compression bonding characterization. / Cakmak, E.; Dragoi, V.; Pabo, E.; Matthias, T.; Alford, Terry.

Materials Research Society Symposium Proceedings. Vol. 1222 2010. p. 167-172.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cakmak, E, Dragoi, V, Pabo, E, Matthias, T & Alford, T 2010, Aluminum thermo-compression bonding characterization. in Materials Research Society Symposium Proceedings. vol. 1222, pp. 167-172, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.
Cakmak E, Dragoi V, Pabo E, Matthias T, Alford T. Aluminum thermo-compression bonding characterization. In Materials Research Society Symposium Proceedings. Vol. 1222. 2010. p. 167-172
Cakmak, E. ; Dragoi, V. ; Pabo, E. ; Matthias, T. ; Alford, Terry. / Aluminum thermo-compression bonding characterization. Materials Research Society Symposium Proceedings. Vol. 1222 2010. pp. 167-172
@inproceedings{02ad14a0d5604bf6a031003672bd3fc2,
title = "Aluminum thermo-compression bonding characterization",
abstract = "Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.",
author = "E. Cakmak and V. Dragoi and E. Pabo and T. Matthias and Terry Alford",
year = "2010",
language = "English (US)",
isbn = "9781605111957",
volume = "1222",
pages = "167--172",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Aluminum thermo-compression bonding characterization

AU - Cakmak, E.

AU - Dragoi, V.

AU - Pabo, E.

AU - Matthias, T.

AU - Alford, Terry

PY - 2010

Y1 - 2010

N2 - Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.

AB - Wafer level bonding is an important technology for the manufacturing of numerous microelectromechanical systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.

UR - http://www.scopus.com/inward/record.url?scp=77955944970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955944970&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77955944970

SN - 9781605111957

VL - 1222

SP - 167

EP - 172

BT - Materials Research Society Symposium Proceedings

ER -