ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Stephen J. Eglash; M. D. Williams; P. H. Mahowald; Nathan Newman; Ingolf Lindau; W. E. Spicer

doi:10.1116/1.582899

ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Stephen J. Eglash, M. D. Williams, P. H. Mahowald, Nathan Newman, Ingolf Lindau, W. E. Spicer

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.

Original language	English (US)
Pages (from-to)	481-485
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	2
Issue number	3
DOIs	https://doi.org/10.1116/1.582899
State	Published - 1984
Externally published	Yes
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA Duration: Jan 31 1984 → Feb 2 1984

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582899

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@article{7547cf0fee40428388a7b905e39a00b7,

title = "ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).",

abstract = "The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.",

author = "Eglash, {Stephen J.} and Williams, {M. D.} and Mahowald, {P. H.} and Nathan Newman and Ingolf Lindau and Spicer, {W. E.}",

year = "1984",

doi = "10.1116/1.582899",

language = "English (US)",

volume = "2",

pages = "481--485",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "3",

note = "Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th ; Conference date: 31-01-1984 Through 02-02-1984",

}

TY - JOUR

T1 - ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

AU - Eglash, Stephen J.

AU - Williams, M. D.

AU - Mahowald, P. H.

AU - Newman, Nathan

AU - Lindau, Ingolf

AU - Spicer, W. E.

PY - 1984

Y1 - 1984

N2 - The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.

AB - The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.

UR - http://www.scopus.com/inward/record.url?scp=0021466918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021466918&partnerID=8YFLogxK

U2 - 10.1116/1.582899

DO - 10.1116/1.582899

M3 - Conference article

AN - SCOPUS:0021466918

SN - 0734-211X

VL - 2

SP - 481

EP - 485

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th

Y2 - 31 January 1984 through 2 February 1984

ER -

ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Abstract

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