ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Stephen J. Eglash, M. D. Williams, P. H. Mahowald, Nathan Newman, Ingolf Lindau, W. E. Spicer

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.

Original languageEnglish (US)
Pages (from-to)481-485
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - 1984
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA
Duration: Jan 31 1984Feb 2 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).'. Together they form a unique fingerprint.

  • Cite this