ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100).

Stephen J. Eglash, M. D. Williams, P. H. Mahowald, Nathan Newman, Ingolf Lindau, W. E. Spicer

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The GaAs surface was prepared by molecular beam epitaxy (MBE) and covered with an arsenic cap. Its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After formation of an aluminum Schottky barrier, the interfacial position of the Fermi level was measured by photoemission spectroscopy and barrier height was measured by I-V and C-V techniques.

Original languageEnglish (US)
Pages (from-to)481-485
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - Jul 1984
Externally publishedYes

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Photoelectron spectroscopy
Arsenic
Molecular beam epitaxy
Aluminum
Synchrotron radiation
Fermi level
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100). / Eglash, Stephen J.; Williams, M. D.; Mahowald, P. H.; Newman, Nathan; Lindau, Ingolf; Spicer, W. E.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 2, No. 3, 07.1984, p. 481-485.

Research output: Contribution to journalArticle

Eglash, Stephen J. ; Williams, M. D. ; Mahowald, P. H. ; Newman, Nathan ; Lindau, Ingolf ; Spicer, W. E. / ALUMINUM SCHOTTKY BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GaAs(100). In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1984 ; Vol. 2, No. 3. pp. 481-485.
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