Abstract
Sapphire (α-Al2O3) is a common substrate for the growth of single- to few-layer MoS2 films, and amorphous aluminium oxide serves as a high-κ dielectric gate oxide for MoS2 based transistors. Using density-functional theory calculations with a van der Waals functional, we investigate the structural, energetic, and electronic properties of n-layer MoS2 (n=1and 3) on the α-Al2O3 (0001) surface. Our results show that the sapphire stabilizes single-layer and tri-layer MoS2, while having a negligible effect on the structure, band gap, and electron effective masses of MoS2. This combination of a strong energetic stabilization and weak perturbation of the electronic properties shows that α-Al2O3 can serve as an ideal substrate for depositing ultra-thin MoS2 layers and can also serve as a passivation or gate-oxide layer for MoS2 based devices.
Original language | English (US) |
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Article number | 053106 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 5 |
DOIs | |
State | Published - Aug 3 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)