Al2O3 as a suitable substrate and a dielectric layer for n -layer MoS2

Arunima K. Singh, Richard G. Hennig, Albert V. Davydov, Francesca Tavazza

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Sapphire (α-Al2O3) is a common substrate for the growth of single- to few-layer MoS2 films, and amorphous aluminium oxide serves as a high-κ dielectric gate oxide for MoS2 based transistors. Using density-functional theory calculations with a van der Waals functional, we investigate the structural, energetic, and electronic properties of n-layer MoS2 (n=1and 3) on the α-Al2O3 (0001) surface. Our results show that the sapphire stabilizes single-layer and tri-layer MoS2, while having a negligible effect on the structure, band gap, and electron effective masses of MoS2. This combination of a strong energetic stabilization and weak perturbation of the electronic properties shows that α-Al2O3 can serve as an ideal substrate for depositing ultra-thin MoS2 layers and can also serve as a passivation or gate-oxide layer for MoS2 based devices.

Original languageEnglish (US)
Article number053106
JournalApplied Physics Letters
Volume107
Issue number5
DOIs
StatePublished - Aug 3 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Al<sub>2</sub>O<sub>3</sub> as a suitable substrate and a dielectric layer for n -layer MoS<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this