@inproceedings{eb689f5b7a78472c8e1471ad3675ef21,
title = "AlOx-based resistive switching device with gradual resistance modulation for neuromorphic device application",
abstract = "AlOx-based resistive switching device (RRAM) with multi-level storage capability was investigated for the potential to serve as an electronic synapse device. The Ti/AlOx/TiN memory stack with memory size 0.48umx0.48um was fabricated; the resistive layer AlOx was deposited using atomic-layer- deposition (ALD) method. Multi-level resistance states were obtained by varying the compliance current levels or the applied voltage amplitudes during pulse cycling. These resistance states are thermally stable for over 1E5s at 125oC. The memory cell resistance can be continuously increased or decreased from each pulse cycle to pulse cycle. More than 1E5 endurance cycles and reading cycles were demonstrated. We further study the potential using this AlOx-based RRAM as electronic synapse device. Around 1% resistance change per pulse cycling was achieved and a plasticity learning rule pulse scheme was proposed to implement the memory device in large-scale hardware neuromorphic computing system.",
keywords = "AlOx, RRAM, neuromorphic computation, resistive switching memory, synapse",
author = "Yi Wu and Shimeng Yu and Wong, {H. S.Philip} and Chen, {Yu Sheng} and Lee, {Heng Yuan} and Wang, {Sum Min} and Gu, {Pei Yi} and Frederick Chen and Tsai, {Ming Jinn}",
year = "2012",
doi = "10.1109/IMW.2012.6213663",
language = "English (US)",
isbn = "9781467310802",
series = "2012 4th IEEE International Memory Workshop, IMW 2012",
booktitle = "2012 4th IEEE International Memory Workshop, IMW 2012",
note = "2012 4th IEEE International Memory Workshop, IMW 2012 ; Conference date: 20-05-2012 Through 23-05-2012",
}