AlN bulk crystals grown on SiC seeds

R. Dalmau, R. Schlesser, B. J. Rodriguez, R. J. Nemanich, Z. Sitar

Research output: Contribution to journalConference article

38 Scopus citations

Abstract

AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.

Original languageEnglish (US)
Pages (from-to)68-74
Number of pages7
JournalJournal of Crystal Growth
Volume281
Issue number1
DOIs
StatePublished - Jul 15 2005
Externally publishedYes
EventThe Internbational Workshop on Bulk Nitride Semiconductors III -
Duration: Sep 4 2004Sep 9 2004

Keywords

  • A2. Growth from vapor
  • A2. Seed crystals
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005). AlN bulk crystals grown on SiC seeds. Journal of Crystal Growth, 281(1), 68-74. https://doi.org/10.1016/j.jcrysgro.2005.03.012