TY - JOUR
T1 - AlN bulk crystals grown on SiC seeds
AU - Dalmau, R.
AU - Schlesser, R.
AU - Rodriguez, B. J.
AU - Nemanich, R. J.
AU - Sitar, Z.
N1 - Funding Information:
This project was funded by the Office of Naval Research under the auspices of the MURI program; Grant no. N00014-01-1-0716, Dr. C. Wood, project monitor. We wish to acknowledge B. Raghothamachar for XRD analysis work.
PY - 2005/7/15
Y1 - 2005/7/15
N2 - AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.
AB - AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.
KW - A2. Growth from vapor
KW - A2. Seed crystals
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2005.03.012
DO - 10.1016/j.jcrysgro.2005.03.012
M3 - Conference article
AN - SCOPUS:20844457908
VL - 281
SP - 68
EP - 74
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
T2 - The Internbational Workshop on Bulk Nitride Semiconductors III
Y2 - 4 September 2004 through 9 September 2004
ER -