AlN bulk crystals grown on SiC seeds

R. Dalmau; R. Schlesser; B. J. Rodriguez; R. J. Nemanich; Z. Sitar

doi:10.1016/j.jcrysgro.2005.03.012

AlN bulk crystals grown on SiC seeds

R. Dalmau, R. Schlesser, B. J. Rodriguez, R. J. Nemanich, Z. Sitar

Research output: Contribution to journal › Conference article › peer-review

39 Scopus citations

Abstract

AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.

Original language	English (US)
Pages (from-to)	68-74
Number of pages	7
Journal	Journal of Crystal Growth
Volume	281
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.03.012
State	Published - Jul 15 2005
Externally published	Yes
Event	The Internbational Workshop on Bulk Nitride Semiconductors III - Duration: Sep 4 2004 → Sep 9 2004

Keywords

A2. Growth from vapor
A2. Seed crystals
B1. Nitrides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "AlN bulk crystals grown on SiC seeds",

abstract = "AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.",

keywords = "A2. Growth from vapor, A2. Seed crystals, B1. Nitrides",

author = "R. Dalmau and R. Schlesser and Rodriguez, {B. J.} and Nemanich, {R. J.} and Z. Sitar",

year = "2005",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2005.03.012",

language = "English (US)",

volume = "281",

pages = "68--74",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

note = "The Internbational Workshop on Bulk Nitride Semiconductors III ; Conference date: 04-09-2004 Through 09-09-2004",

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TY - JOUR

T1 - AlN bulk crystals grown on SiC seeds

AU - Dalmau, R.

AU - Schlesser, R.

AU - Rodriguez, B. J.

AU - Nemanich, R. J.

AU - Sitar, Z.

PY - 2005/7/15

Y1 - 2005/7/15

N2 - AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.

AB - AlN layers with thickness between 0.1 and 3 mm were grown on on-axis and off-axis (0 0 0 1), Si-face SiC seeds by physical vapor transport (PVT) from an AlN powder source. A two-step deposition process was developed for the growth of thick layers. Cracks formed in the AlN layers due to the thermal expansion mismatch between AlN and SiC were observed to decrease with increase in AlN thickness. AlN grown on on-axis SiC was primarily Al-polar, but contained N-polar inversion domains (IDs) revealed by wet etching in hot, aqueous phosphoric acid or potassium hydroxide solutions. Regions of opposite polarity on basal plane surfaces were imaged by piezoresponse force microscopy (PFM). IDs were not observed in crystals grown on off-axis seeds. The influence of SiC seed orientation and stability on the polarity of the AlN layers is discussed.

KW - A2. Growth from vapor

KW - A2. Seed crystals

KW - B1. Nitrides

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U2 - 10.1016/j.jcrysgro.2005.03.012

DO - 10.1016/j.jcrysgro.2005.03.012

M3 - Conference article

AN - SCOPUS:20844457908

VL - 281

SP - 68

EP - 74

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

T2 - The Internbational Workshop on Bulk Nitride Semiconductors III

Y2 - 4 September 2004 through 9 September 2004

ER -