Allowed and forbidden scattering by LO phonons: Interference effects

J. Menéndez, M. Cardona

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We discuss resonant scattering by LO phonons in zincblende-type semiconductors. It has an allowed (deformation potential) and a forbidden (Fröhlich interaction) component. For a (001) surface_the scattering amplitude changes sign in going from the [110] to the [110] polarized scattering configurations. The forbidden component, always diagonal, remains the same. Interference between the two components, which can be easily identified by going from the [011] to the [O1l] polarized configurations, takes place. These interference phenomena decrease for impure samples as a result of the incoherent forbidden scattering induced by the impurities. Data for GaAs and InSb are presented.

Original languageEnglish (US)
Pages (from-to)181-185
Number of pages5
JournalPure and Applied Chemistry
Volume57
Issue number2
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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