ALLOWED AND FORBIDDEN SCATTERING BY LO PHONONS: INTERFERENCE EFFECTS.

Jose Menendez, M. Cardona

Research output: Contribution to journalArticle

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Abstract

We discuss resonant scattering by LO phonons in zincblende-type semiconductors. It has an allowed (deformation potential) and a forbidden (Froehlich interaction) component. For a (001) surface the scattering amplitude changes sign in going from the left bracket 110 right bracket to the left bracket 110 OVER BAR right bracket polarized scattering configurations. The forbidden component, always diagonal, remains the same. Interference between the two components, which can be easily identified by going from the left bracket 011 right bracket to the left bracket 011 OVER BAR right bracket polarized configurations, takes place. These interference phenomena decrease for impure samples as a result of the incoherent forbidden scattering induced by the impurities. Data for GaAs and InSb are presented.

Original languageEnglish (US)
Pages (from-to)181-185
Number of pages5
JournalPure and Applied Chemistry
Volume57
Issue number2
StatePublished - Feb 1984
Externally publishedYes

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Phonons
Scattering
Incoherent scattering
Impurities
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

ALLOWED AND FORBIDDEN SCATTERING BY LO PHONONS : INTERFERENCE EFFECTS. / Menendez, Jose; Cardona, M.

In: Pure and Applied Chemistry, Vol. 57, No. 2, 02.1984, p. 181-185.

Research output: Contribution to journalArticle

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