Abstract
We discuss resonant scattering by LO phonons in zincblende-type semiconductors. It has an allowed (deformation potential) and a forbidden (Fröhlich interaction) component. For a (001) surface_the scattering amplitude changes sign in going from the [110] to the [110] polarized scattering configurations. The forbidden component, always diagonal, remains the same. Interference between the two components, which can be easily identified by going from the [011] to the [O1l] polarized configurations, takes place. These interference phenomena decrease for impure samples as a result of the incoherent forbidden scattering induced by the impurities. Data for GaAs and InSb are presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 181-185 |
| Number of pages | 5 |
| Journal | Pure and Applied Chemistry |
| Volume | 57 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1 1985 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- General Chemical Engineering