We discuss resonant scattering by LO phonons in zincblende-type semiconductors. It has an allowed (deformation potential) and a forbidden (Fröhlich interaction) component. For a (001) surface_the scattering amplitude changes sign in going from the  to the  polarized scattering configurations. The forbidden component, always diagonal, remains the same. Interference between the two components, which can be easily identified by going from the  to the [O1l] polarized configurations, takes place. These interference phenomena decrease for impure samples as a result of the incoherent forbidden scattering induced by the impurities. Data for GaAs and InSb are presented.
|Original language||English (US)|
|Number of pages||5|
|Journal||Pure and Applied Chemistry|
|State||Published - Jan 1 1985|
ASJC Scopus subject areas
- Chemical Engineering(all)