All silicon tandem solar cell

Alex Killam, Tim Reblitz, Andre Augusto, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystalline silicon is consistently the dominant material for commercial photovoltaic devices. Exploiting the direct and indirect bandgap of silicon results in a silicon-silicon tandem solar cells with possible efficiency benefits over standard single-junction silicon solar cells. Epitaxial growth offers a way to make such cells and the resulting devices have higher voltage and lower currents leading to much lower module losses. All silicon tandem devices were modeled in PC1D using precise solar spectrums generated with SMARTS. The optimal layer thicknesses found when the input spectrum is AM1.5G for a silicon-silicon device are: 3.3 μm for the top absorber and 172 μm for the bottom absorber. The modeled device produces an efficiency of 21.3%, a 1.1% relative increase over a model for a commercial silicon cell.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • PC1D
  • Photovoltaic cell
  • Silicon
  • SMARTS
  • Solar cell
  • Tandem

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Killam, A., Reblitz, T., Augusto, A., & Bowden, S. (2018). All silicon tandem solar cell. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366565