Abstract
Crystalline silicon is consistently the dominant material for commercial photovoltaic devices. Exploiting the direct and indirect bandgap of silicon results in a silicon-silicon tandem solar cells with possible efficiency benefits over standard single-junction silicon solar cells. Epitaxial growth offers a way to make such cells and the resulting devices have higher voltage and lower currents leading to much lower module losses. All silicon tandem devices were modeled in PC1D using precise solar spectrums generated with SMARTS. The optimal layer thicknesses found when the input spectrum is AM1.5G for a silicon-silicon device are: 3.3 μm for the top absorber and 172 μm for the bottom absorber. The modeled device produces an efficiency of 21.3%, a 1.1% relative increase over a model for a commercial silicon cell.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-3 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
Fingerprint
Keywords
- PC1D
- Photovoltaic cell
- Silicon
- SMARTS
- Solar cell
- Tandem
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
All silicon tandem solar cell. / Killam, Alex; Reblitz, Tim; Augusto, Andre; Bowden, Stuart.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - All silicon tandem solar cell
AU - Killam, Alex
AU - Reblitz, Tim
AU - Augusto, Andre
AU - Bowden, Stuart
PY - 2018/5/25
Y1 - 2018/5/25
N2 - Crystalline silicon is consistently the dominant material for commercial photovoltaic devices. Exploiting the direct and indirect bandgap of silicon results in a silicon-silicon tandem solar cells with possible efficiency benefits over standard single-junction silicon solar cells. Epitaxial growth offers a way to make such cells and the resulting devices have higher voltage and lower currents leading to much lower module losses. All silicon tandem devices were modeled in PC1D using precise solar spectrums generated with SMARTS. The optimal layer thicknesses found when the input spectrum is AM1.5G for a silicon-silicon device are: 3.3 μm for the top absorber and 172 μm for the bottom absorber. The modeled device produces an efficiency of 21.3%, a 1.1% relative increase over a model for a commercial silicon cell.
AB - Crystalline silicon is consistently the dominant material for commercial photovoltaic devices. Exploiting the direct and indirect bandgap of silicon results in a silicon-silicon tandem solar cells with possible efficiency benefits over standard single-junction silicon solar cells. Epitaxial growth offers a way to make such cells and the resulting devices have higher voltage and lower currents leading to much lower module losses. All silicon tandem devices were modeled in PC1D using precise solar spectrums generated with SMARTS. The optimal layer thicknesses found when the input spectrum is AM1.5G for a silicon-silicon device are: 3.3 μm for the top absorber and 172 μm for the bottom absorber. The modeled device produces an efficiency of 21.3%, a 1.1% relative increase over a model for a commercial silicon cell.
KW - PC1D
KW - Photovoltaic cell
KW - Silicon
KW - SMARTS
KW - Solar cell
KW - Tandem
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U2 - 10.1109/PVSC.2017.8366565
DO - 10.1109/PVSC.2017.8366565
M3 - Conference contribution
AN - SCOPUS:85048483042
SP - 1
EP - 3
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -