Abstract

The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
StatePublished - Sep 1 2011
Event2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Other

Other2011 Conference on Lasers and Electro-Optics, CLEO 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Li, D., & Ning, C-Z. (2011). All-semiconductor plasmonic system in mid infrared range. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 [5951617] (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).