Abstract

The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
StatePublished - Dec 1 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Li, D., & Ning, C-Z. (2011). All-semiconductor plasmonic system in mid infrared range. In Quantum Electronics and Laser Science Conference, QELS 2011 (Optics InfoBase Conference Papers).