All-semiconductor plasmonic system in mid infrared range

D. Li; Cun-Zheng Ning

All-semiconductor plasmonic system in mid infrared range

D. Li, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.

Original language	English (US)
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2011
State	Published - Dec 1 2011
Event	Quantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States Duration: May 1 2011 → May 6 2011

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2011
Country/Territory	United States
City	Baltimore, MD
Period	5/1/11 → 5/6/11

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{37f2df84b9f84136a0014ab569521ab1,

title = "All-semiconductor plasmonic system in mid infrared range",

abstract = "The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.",

author = "D. Li and Cun-Zheng Ning",

year = "2011",

month = dec,

day = "1",

language = "English (US)",

isbn = "9781557529107",

series = "Optics InfoBase Conference Papers",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2011",

note = "Quantum Electronics and Laser Science Conference, QELS 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - All-semiconductor plasmonic system in mid infrared range

AU - Li, D.

AU - Ning, Cun-Zheng

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.

AB - The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.

UR - http://www.scopus.com/inward/record.url?scp=84894102564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894102564&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894102564

SN - 9781557529107

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2011

T2 - Quantum Electronics and Laser Science Conference, QELS 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

All-semiconductor plasmonic system in mid infrared range

Abstract

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ASJC Scopus subject areas

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