TY - JOUR
T1 - AlGaSb-Based Solar Cells Grown on GaAs
T2 - Structural Investigation and Device Performance
AU - Vadiee, E.
AU - Renteria, E.
AU - Zhang, C.
AU - Williams, J. J.
AU - Mansoori, A.
AU - Addamane, S.
AU - Balakrishnan, G.
AU - Honsberg, Christiana
N1 - Funding Information:
Manuscript received September 29, 2016; revised December 18, 2016, March 26, 2017, May 10, 2017, and July 27, 2017; accepted September 18, 2017. Date of publication October 9, 2017; date of current version October 19, 2017. This work was supported in part by the Engineering Research Center program of the National Science Foundation and in part by the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. (Corresponding author: E. Vadiee.) E. Vadiee, C. Zhang, J. J. Williams, and C. B. Honsberg are with Arizona State University, Tempe, AZ 85287 USA (e-mail: evadiee@asu.edu; czhang86@ asu.edu; jjwilli6@asu.edu; honsberg@asu.edu).
Publisher Copyright:
© 2011-2012 IEEE.
PY - 2017/11
Y1 - 2017/11
N2 - GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of AlxGa1-xSb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of AlxGa1-xSb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Alx Ga1xSb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al0.15Ga0.85Sb, and Al0.5Ga0.5Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.
AB - GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of AlxGa1-xSb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of AlxGa1-xSb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Alx Ga1xSb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al0.15Ga0.85Sb, and Al0.5Ga0.5Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.
KW - Aluminum gallium antimonide
KW - epitaxial layers
KW - high lattice mismatch
KW - misfit dislocation
KW - single-junction solar cell
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U2 - 10.1109/JPHOTOV.2017.2756056
DO - 10.1109/JPHOTOV.2017.2756056
M3 - Article
AN - SCOPUS:85031817001
SN - 2156-3381
VL - 7
SP - 1795
EP - 1801
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 6
M1 - 8063407
ER -