Abstract

GaSb and alloys based on the 6.1 &#x00C5; family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al<formula><tex>$_{\text {x}}$</tex></formula>Ga<formula><tex>$_{1-}$</tex></formula><formula><tex>$_{\text {x}}$</tex></formula>Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al<formula><tex>$_{1-}$</tex></formula><formula><tex>$_{\text{x}}$</tex></formula>Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al<formula><tex>$_{\text{x}}$</tex></formula>Ga<formula><tex>$_{1}$</tex></formula><formula><tex>$_{\text {x}}$</tex></formula>Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al<formula><tex>$_{0.15}$</tex></formula>Ga<formula><tex>$_{0.85}$</tex></formula>Sb, and Al<formula><tex>$_{0.5}$</tex></formula>Ga<formula><tex>$_{0.5}$</tex></formula>Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Oct 7 2017

Fingerprint

Solar cells
solar cells
Substrates
Cells
Lattice mismatch
Open circuit voltage
Crystallization
open circuit voltage
spectral sensitivity
Crystal growth
Molecular beam epitaxy
crystal growth
molecular beam epitaxy
gallium arsenide
optimization
cells
Chemical analysis
ganhuangenin

Keywords

  • Aluminum gallium antimonide
  • epitaxial layers
  • Gallium arsenide
  • high lattice mismatch
  • Lattices
  • Metals
  • misfit dislocation
  • Photonic band gap
  • Photovoltaic cells
  • single-junction solar cell
  • Substrates
  • Transmission line measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

AlGaSb-Based Solar Cells Grown on GaAs : Structural Investigation and Device Performance. / Vadiee, E.; Renteria, E.; Zhang, C.; Williams, J. J.; Mansoori, A.; Addamane, S.; Balakrishnan, G.; Honsberg, Christiana.

In: IEEE Journal of Photovoltaics, 07.10.2017.

Research output: Contribution to journalArticle

Vadiee, E. ; Renteria, E. ; Zhang, C. ; Williams, J. J. ; Mansoori, A. ; Addamane, S. ; Balakrishnan, G. ; Honsberg, Christiana. / AlGaSb-Based Solar Cells Grown on GaAs : Structural Investigation and Device Performance. In: IEEE Journal of Photovoltaics. 2017.
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abstract = "GaSb and alloys based on the 6.1 {\AA} family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al$_{\text {x}}$Ga$_{1-}$$_{\text {x}}$Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al$_{1-}$$_{\text{x}}$Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al$_{\text{x}}$Ga$_{1}$$_{\text {x}}$Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al$_{0.15}$Ga$_{0.85}$Sb, and Al$_{0.5}$Ga$_{0.5}$Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.",
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AU - Vadiee, E.

AU - Renteria, E.

AU - Zhang, C.

AU - Williams, J. J.

AU - Mansoori, A.

AU - Addamane, S.

AU - Balakrishnan, G.

AU - Honsberg, Christiana

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N2 - GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al$_{\text {x}}$Ga$_{1-}$$_{\text {x}}$Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al$_{1-}$$_{\text{x}}$Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al$_{\text{x}}$Ga$_{1}$$_{\text {x}}$Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al$_{0.15}$Ga$_{0.85}$Sb, and Al$_{0.5}$Ga$_{0.5}$Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.

AB - GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al$_{\text {x}}$Ga$_{1-}$$_{\text {x}}$Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al$_{1-}$$_{\text{x}}$Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al$_{\text{x}}$Ga$_{1}$$_{\text {x}}$Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al$_{0.15}$Ga$_{0.85}$Sb, and Al$_{0.5}$Ga$_{0.5}$Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.

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