Abstract

A goal for concentrating photovoltaics is to realize efficiencies over 50%. Recent 4J bonded solar cells show a path to such high efficiency devices by separately growing the top and bottom solar cells. Present experimental devices use InP-based materials for the bottom junctions. III-Sb solar cells can be good candidates for bottom solar cells. Sb-containing III-V alloys have shown high electron mobility, wide band gap range including small band gaps, flexible band alignment, and small effective electron mass [1]. In addition, GaSb alloys can be grown with low defect densities on GaAs. This paper investigates GaSb-based solar cells. We show AlGaSb based solar cells grown directly on semi-insulator GaAs (001) substrates by Molecular Beam Epitaxy (MBE). Device and structural investigations have been performed to assess the electrical properties and material quality. Devices in the GaSb material system show Woc of 0.30, a very high value for a low band gap solar cell. To control the device properties, GaSb based solar cells grown on GaAs (100) substrates were compared to the devices grown on GaSb substrates.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2313-2316
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Molecular beam epitaxy
Solar cells
Energy gap
Substrates
Defect density
Electron mobility
Electric properties
Electrons

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Vadiee, E., Zhang, C., Faleev, N. N., Addamane, S., Wang, S., Ponce, F., ... Honsberg, C. (2016). AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2313-2316). [7750050] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750050

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. / Vadiee, Ehsan; Zhang, Chaomin; Faleev, Nikolai N.; Addamane, Sadhvikas; Wang, Shuo; Ponce, Fernando; Balakrishnan, Ganesh; Honsberg, Christiana.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2313-2316 7750050.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vadiee, E, Zhang, C, Faleev, NN, Addamane, S, Wang, S, Ponce, F, Balakrishnan, G & Honsberg, C 2016, AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750050, Institute of Electrical and Electronics Engineers Inc., pp. 2313-2316, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750050
Vadiee E, Zhang C, Faleev NN, Addamane S, Wang S, Ponce F et al. AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2313-2316. 7750050 https://doi.org/10.1109/PVSC.2016.7750050
Vadiee, Ehsan ; Zhang, Chaomin ; Faleev, Nikolai N. ; Addamane, Sadhvikas ; Wang, Shuo ; Ponce, Fernando ; Balakrishnan, Ganesh ; Honsberg, Christiana. / AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2313-2316
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