AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the delta-doped barrier layer

Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang, Y. Liu, J. A. Bardwell, J. B. Webb, H. Tang

Research output: Contribution to journalConference articlepeer-review

Abstract

The fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Original languageEnglish (US)
Pages (from-to)567-571
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume743
DOIs
StatePublished - 2002
Externally publishedYes
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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