AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Tsung Han Yang, Jesse Brown, Kai Fu, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

Fingerprint Dive into the research topics of 'AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric'. Together they form a unique fingerprint.

Physics & Astronomy