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AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric
Tsung Han Yang, Jesse Brown, Kai Fu, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, Yuji Zhao
Research output: Contribution to journal › Article › peer-review
12
Scopus
citations