Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications

Bin Zhou, Xiaofei Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

ZnO was successfully synthesized by a novel co-spray deposition technique. Two solutions were prepared and sprayed through two spray heads. In one solution, Zn(O2CCH3)2 (Zn precursor) and AlCl3 (Al precursor) were dissolved in a mixture of deionized water and ethanol. In another solution, NH4F (F precursor) was dissolved in the same mixture. The deposition was carried out at 500°C on soda-lime glass in air. Compared to Al-doped or F-doped ZnO, Al and F codoped ZnO resulted in much lower sheet resistance. The lowest sheet resistance obtained so far is below 55 Ω/sq from solutions with 0.6 at.% Al and 55 at.% F, respectively, after vacuum annealing at 400°C for 1 h. The average transmittance of Al and F codoped ZnO is above 80% in the visible range. The effects of dopant concentrations in the starting solutions on the electrical, structural, and optical properties of Al and F codoped ZnO were also investigated.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1195-1198
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Solar cells
Sheet resistance
Deionized water
Lime
Structural properties
Electric properties
Ethanol
Optical properties
Doping (additives)
Vacuum
Annealing
Glass
Air

Keywords

  • Co-spray deposition
  • Codoping
  • Solar cells
  • TCO
  • ZnO films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Zhou, B., Han, X., & Tao, M. (2013). Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1195-1198). [6744354] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744354

Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications. / Zhou, Bin; Han, Xiaofei; Tao, Meng.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1195-1198 6744354.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhou, B, Han, X & Tao, M 2013, Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744354, Institute of Electrical and Electronics Engineers Inc., pp. 1195-1198, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744354
Zhou B, Han X, Tao M. Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1195-1198. 6744354 https://doi.org/10.1109/PVSC.2013.6744354
Zhou, Bin ; Han, Xiaofei ; Tao, Meng. / Al and F codoped ZnO by a novel co-spray deposition technique for solar cells applications. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1195-1198
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N2 - ZnO was successfully synthesized by a novel co-spray deposition technique. Two solutions were prepared and sprayed through two spray heads. In one solution, Zn(O2CCH3)2 (Zn precursor) and AlCl3 (Al precursor) were dissolved in a mixture of deionized water and ethanol. In another solution, NH4F (F precursor) was dissolved in the same mixture. The deposition was carried out at 500°C on soda-lime glass in air. Compared to Al-doped or F-doped ZnO, Al and F codoped ZnO resulted in much lower sheet resistance. The lowest sheet resistance obtained so far is below 55 Ω/sq from solutions with 0.6 at.% Al and 55 at.% F, respectively, after vacuum annealing at 400°C for 1 h. The average transmittance of Al and F codoped ZnO is above 80% in the visible range. The effects of dopant concentrations in the starting solutions on the electrical, structural, and optical properties of Al and F codoped ZnO were also investigated.

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