Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

John Moreland; Jeff Drucker; P. K. Hansma; Jörg P. Kotthaus; Arnold Adams; R. Kvaas

doi:10.1063/1.95003

Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

John Moreland, Jeff Drucker, P. K. Hansma, Jörg P. Kotthaus, Arnold Adams, R. Kvaas

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

Original language	English (US)
Pages (from-to)	104-106
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1063/1.95003
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces",

abstract = "An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 {\AA} above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.",

author = "John Moreland and Jeff Drucker and Hansma, {P. K.} and Kotthaus, {J{\"o}rg P.} and Arnold Adams and R. Kvaas",

year = "1984",

doi = "10.1063/1.95003",

language = "English (US)",

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publisher = "American Institute of Physics Publising LLC",

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AU - Moreland, John

AU - Drucker, Jeff

AU - Hansma, P. K.

AU - Kotthaus, Jörg P.

AU - Adams, Arnold

AU - Kvaas, R.

PY - 1984

Y1 - 1984

N2 - An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

AB - An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

Abstract

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