Abstract
An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.
Original language | English (US) |
---|---|
Pages (from-to) | 104-106 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 45 |
Issue number | 1 |
DOIs | |
State | Published - 1984 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)