Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

John Moreland; Jeff Drucker; P. K. Hansma; Jörg P. Kotthaus; Arnold Adams; R. Kvaas

doi:10.1063/1.95003

Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

John Moreland, Jeff Drucker, P. K. Hansma, Jörg P. Kotthaus, Arnold Adams, R. Kvaas

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

Original language	English (US)
Pages (from-to)	104-106
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1063/1.95003
State	Published - Dec 1 1984
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.95003

Fingerprint Dive into the research topics of 'Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces'. Together they form a unique fingerprint.

Cite this

Moreland, J., Drucker, J., Hansma, P. K., Kotthaus, J. P., Adams, A., & Kvaas, R. (1984). Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces. Applied Physics Letters, 45(1), 104-106. https://doi.org/10.1063/1.95003

@article{2a6417f27fa347ecb4e2c7ba63356432,

title = "Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces",

abstract = "An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 {\AA} above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.",

author = "John Moreland and Jeff Drucker and Hansma, {P. K.} and Kotthaus, {J{\"o}rg P.} and Arnold Adams and R. Kvaas",

year = "1984",

month = dec,

day = "1",

doi = "10.1063/1.95003",

language = "English (US)",

volume = "45",

pages = "104--106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

AU - Moreland, John

AU - Drucker, Jeff

AU - Hansma, P. K.

AU - Kotthaus, Jörg P.

AU - Adams, Arnold

AU - Kvaas, R.

PY - 1984/12/1

Y1 - 1984/12/1

N2 - An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

AB - An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 Å above an n-type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

UR - http://www.scopus.com/inward/record.url?scp=0021458576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021458576&partnerID=8YFLogxK

U2 - 10.1063/1.95003

DO - 10.1063/1.95003

M3 - Article

AN - SCOPUS:0021458576

VL - 45

SP - 104

EP - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -