AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES.

John Moreland, Jeffery Drucker, P. K. Hansma, Jorg P. Kotthaus, Arnold Adams, R. Kvaas

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700-3600 A above an n-type Si 111 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors.

Original languageEnglish (US)
Pages (from-to)104-106
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number1
DOIs
StatePublished - Jul 1984
Externally publishedYes

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capacitors
insulators
air
electric potential
metal oxide semiconductors
capacitance
curves
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES. / Moreland, John; Drucker, Jeffery; Hansma, P. K.; Kotthaus, Jorg P.; Adams, Arnold; Kvaas, R.

In: Applied Physics Letters, Vol. 45, No. 1, 07.1984, p. 104-106.

Research output: Contribution to journalArticle

Moreland, J, Drucker, J, Hansma, PK, Kotthaus, JP, Adams, A & Kvaas, R 1984, 'AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES.', Applied Physics Letters, vol. 45, no. 1, pp. 104-106. https://doi.org/10.1063/1.95003
Moreland, John ; Drucker, Jeffery ; Hansma, P. K. ; Kotthaus, Jorg P. ; Adams, Arnold ; Kvaas, R. / AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES. In: Applied Physics Letters. 1984 ; Vol. 45, No. 1. pp. 104-106.
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