Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction

Jyothi B. Velamala, Ketul B. Sutaria, Takashi Sato, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)

Abstract

The aging process due to Negative Bias Temperature Instability (NBTI) exhibits a significant amount of variability and thus poses a dramatic challenge for long-term reliability prediction from short-term stress measurement. To develop a robust prediction method in this circumstance, this work first collects statistical device data from a 65nm test chip with a resolution of 0.2mV in threshold voltage (V th) measurement. By comparing model prediction from short-term stress data (<20k second) with direct long-term measurement (up to 200k second), we conclude that (1) the degradation follows a logarithmic dependence on time, as opposed to the conventional power law; (2) the Reaction-Diffusion (R-D) based t n model significantly overestimates the aging rate and exaggerates its variance; (3) the log(t) model, derived from the trapping/de-trapping (T-D) mechanism, correctly captures the aging variability due to the randomness in number of available traps, and accurately predicts the mean and the variance of V th shift. These results guide the development of a new aging model for robust long-term lifetime prediction.

Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
StatePublished - 2012
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: Apr 15 2012Apr 19 2012

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period4/15/124/19/12

Fingerprint

Aging of materials
Statistics
Silicon
Stress measurement
Threshold voltage
Degradation

Keywords

  • long-term prediction
  • NBTI
  • Statistical degradation
  • trapping/detrapping

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Velamala, J. B., Sutaria, K. B., Sato, T., & Cao, Y. (2012). Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction. In IEEE International Reliability Physics Symposium Proceedings [6241795] https://doi.org/10.1109/IRPS.2012.6241795

Aging statistics based on trapping/detrapping : Silicon evidence, modeling and long-term prediction. / Velamala, Jyothi B.; Sutaria, Ketul B.; Sato, Takashi; Cao, Yu.

IEEE International Reliability Physics Symposium Proceedings. 2012. 6241795.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Velamala, JB, Sutaria, KB, Sato, T & Cao, Y 2012, Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction. in IEEE International Reliability Physics Symposium Proceedings., 6241795, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, United States, 4/15/12. https://doi.org/10.1109/IRPS.2012.6241795
Velamala JB, Sutaria KB, Sato T, Cao Y. Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction. In IEEE International Reliability Physics Symposium Proceedings. 2012. 6241795 https://doi.org/10.1109/IRPS.2012.6241795
Velamala, Jyothi B. ; Sutaria, Ketul B. ; Sato, Takashi ; Cao, Yu. / Aging statistics based on trapping/detrapping : Silicon evidence, modeling and long-term prediction. IEEE International Reliability Physics Symposium Proceedings. 2012.
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