Ag metallization on suicides with nitride barriers

M. M. Mitan, H. C. Kim, Terry Alford, G. F. Malgas, Daniel Adams

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures.

Original languageEnglish (US)
Pages (from-to)2804-2810
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number6
DOIs
StatePublished - Nov 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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