Abstract
The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2804-2810 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 1 2004 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering