The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering