AFM analysis of HF vapor cleaned SiO 2 surfaces

R. J. Carter, E. J. Bergman, D. R. Lee, J. Owyang, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si(100) surfaces were cleaned using HF/IPA vapor chemistries at ambient pressure and temperature with nitrogen as the carrier gas. Three distinct cases for oxide removal were studied: vapor etching of native oxides, RCA chemical oxides, and thermal oxides. Atomic Force Microscopy (AFM) was used to characterize the surface morphology after the HF vapor etching process. The AFM indicated exaggerated peaks in random places on the surface. These peaks were identified as residue remaining after the vapor etching process. The average lateral width of the peaks were approximately 50 nm. The average height of the peaks for native and chemical oxide etched surfaces was relatively the same, approximately 8 nm. The average height of the peaks after thermal oxide removal was significantly smaller, approximately 1-2 nm. Peak density for native oxide etched surfaces was significantly greater than chemical or thermal oxide etched surfaces. We suggest that impurities in the oxide contribute to residue formation on the surface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.T. Fulks, G.N. Parsons, D.E. Slobadin, T.H. Yuzuriha
PublisherMRS
Pages481-486
Number of pages6
Volume477
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997

Other

OtherProceedings of the 1997 MRS Spring Meeting
CitySan Francisco, CA, USA
Period3/31/974/3/97

Fingerprint

Oxides
Atomic force microscopy
Vapors
Etching
Surface morphology
Nitrogen
Gases
Impurities
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Carter, R. J., Bergman, E. J., Lee, D. R., Owyang, J., & Nemanich, R. (1997). AFM analysis of HF vapor cleaned SiO 2 surfaces In R. T. Fulks, G. N. Parsons, D. E. Slobadin, & T. H. Yuzuriha (Eds.), Materials Research Society Symposium - Proceedings (Vol. 477, pp. 481-486). MRS.

AFM analysis of HF vapor cleaned SiO 2 surfaces . / Carter, R. J.; Bergman, E. J.; Lee, D. R.; Owyang, J.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. ed. / R.T. Fulks; G.N. Parsons; D.E. Slobadin; T.H. Yuzuriha. Vol. 477 MRS, 1997. p. 481-486.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carter, RJ, Bergman, EJ, Lee, DR, Owyang, J & Nemanich, R 1997, AFM analysis of HF vapor cleaned SiO 2 surfaces in RT Fulks, GN Parsons, DE Slobadin & TH Yuzuriha (eds), Materials Research Society Symposium - Proceedings. vol. 477, MRS, pp. 481-486, Proceedings of the 1997 MRS Spring Meeting, San Francisco, CA, USA, 3/31/97.
Carter RJ, Bergman EJ, Lee DR, Owyang J, Nemanich R. AFM analysis of HF vapor cleaned SiO 2 surfaces In Fulks RT, Parsons GN, Slobadin DE, Yuzuriha TH, editors, Materials Research Society Symposium - Proceedings. Vol. 477. MRS. 1997. p. 481-486
Carter, R. J. ; Bergman, E. J. ; Lee, D. R. ; Owyang, J. ; Nemanich, Robert. / AFM analysis of HF vapor cleaned SiO 2 surfaces Materials Research Society Symposium - Proceedings. editor / R.T. Fulks ; G.N. Parsons ; D.E. Slobadin ; T.H. Yuzuriha. Vol. 477 MRS, 1997. pp. 481-486
@inproceedings{fdbb54e6d48d461dbf166ecdea7d5470,
title = "AFM analysis of HF vapor cleaned SiO 2 surfaces",
abstract = "Si(100) surfaces were cleaned using HF/IPA vapor chemistries at ambient pressure and temperature with nitrogen as the carrier gas. Three distinct cases for oxide removal were studied: vapor etching of native oxides, RCA chemical oxides, and thermal oxides. Atomic Force Microscopy (AFM) was used to characterize the surface morphology after the HF vapor etching process. The AFM indicated exaggerated peaks in random places on the surface. These peaks were identified as residue remaining after the vapor etching process. The average lateral width of the peaks were approximately 50 nm. The average height of the peaks for native and chemical oxide etched surfaces was relatively the same, approximately 8 nm. The average height of the peaks after thermal oxide removal was significantly smaller, approximately 1-2 nm. Peak density for native oxide etched surfaces was significantly greater than chemical or thermal oxide etched surfaces. We suggest that impurities in the oxide contribute to residue formation on the surface.",
author = "Carter, {R. J.} and Bergman, {E. J.} and Lee, {D. R.} and J. Owyang and Robert Nemanich",
year = "1997",
language = "English (US)",
volume = "477",
pages = "481--486",
editor = "R.T. Fulks and G.N. Parsons and D.E. Slobadin and T.H. Yuzuriha",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - AFM analysis of HF vapor cleaned SiO 2 surfaces

AU - Carter, R. J.

AU - Bergman, E. J.

AU - Lee, D. R.

AU - Owyang, J.

AU - Nemanich, Robert

PY - 1997

Y1 - 1997

N2 - Si(100) surfaces were cleaned using HF/IPA vapor chemistries at ambient pressure and temperature with nitrogen as the carrier gas. Three distinct cases for oxide removal were studied: vapor etching of native oxides, RCA chemical oxides, and thermal oxides. Atomic Force Microscopy (AFM) was used to characterize the surface morphology after the HF vapor etching process. The AFM indicated exaggerated peaks in random places on the surface. These peaks were identified as residue remaining after the vapor etching process. The average lateral width of the peaks were approximately 50 nm. The average height of the peaks for native and chemical oxide etched surfaces was relatively the same, approximately 8 nm. The average height of the peaks after thermal oxide removal was significantly smaller, approximately 1-2 nm. Peak density for native oxide etched surfaces was significantly greater than chemical or thermal oxide etched surfaces. We suggest that impurities in the oxide contribute to residue formation on the surface.

AB - Si(100) surfaces were cleaned using HF/IPA vapor chemistries at ambient pressure and temperature with nitrogen as the carrier gas. Three distinct cases for oxide removal were studied: vapor etching of native oxides, RCA chemical oxides, and thermal oxides. Atomic Force Microscopy (AFM) was used to characterize the surface morphology after the HF vapor etching process. The AFM indicated exaggerated peaks in random places on the surface. These peaks were identified as residue remaining after the vapor etching process. The average lateral width of the peaks were approximately 50 nm. The average height of the peaks for native and chemical oxide etched surfaces was relatively the same, approximately 8 nm. The average height of the peaks after thermal oxide removal was significantly smaller, approximately 1-2 nm. Peak density for native oxide etched surfaces was significantly greater than chemical or thermal oxide etched surfaces. We suggest that impurities in the oxide contribute to residue formation on the surface.

UR - http://www.scopus.com/inward/record.url?scp=0030715187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030715187&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030715187

VL - 477

SP - 481

EP - 486

BT - Materials Research Society Symposium - Proceedings

A2 - Fulks, R.T.

A2 - Parsons, G.N.

A2 - Slobadin, D.E.

A2 - Yuzuriha, T.H.

PB - MRS

ER -