Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method

X. J. Meng; Z. Q. Ma; P. Lv; Z. S. Yu; F. Li

doi:10.1109/IPFA.2009.5232595

Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method

X. J. Meng, Z. Q. Ma, P. Lv, Z. S. Yu, F. Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2μs. Then it rose to 2.5~5μs after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48μs average, even over l00μs locally. The escape of hydrogen was discovered after sintering. The electron collection ability between Ag and AI was also compared by effective lifetime testing.

Original language	English (US)
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	511-514
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2009.5232595
State	Published - 2009
Externally published	Yes
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: Jul 6 2009 → Jul 10 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	7/6/09 → 7/10/09

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2009.5232595

Cite this

Meng, X. J., Ma, Z. Q., Lv, P., Yu, Z. S., & Li, F. (2009). Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 511-514). Article 5232595 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232595

Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method. / Meng, X. J.; Ma, Z. Q.; Lv, P. et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 511-514 5232595 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Meng, XJ, Ma, ZQ, Lv, P, Yu, ZS & Li, F 2009, Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232595, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 511-514, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 7/6/09. https://doi.org/10.1109/IPFA.2009.5232595

Meng XJ, Ma ZQ, Lv P, Yu ZS, Li F. Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 511-514. 5232595. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232595

Meng, X. J. ; Ma, Z. Q. ; Lv, P. et al. / Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. pp. 511-514 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{e6d613ddfbde4ff2a0c64901e289b605,

title = "Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method",

abstract = "Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2μs. Then it rose to 2.5~5μs after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48μs average, even over l00μs locally. The escape of hydrogen was discovered after sintering. The electron collection ability between Ag and AI was also compared by effective lifetime testing.",

author = "Meng, {X. J.} and Ma, {Z. Q.} and P. Lv and Yu, {Z. S.} and F. Li",

year = "2009",

doi = "10.1109/IPFA.2009.5232595",

language = "English (US)",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "511--514",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

TY - GEN

T1 - Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method

AU - Meng, X. J.

AU - Ma, Z. Q.

AU - Lv, P.

AU - Yu, Z. S.

AU - Li, F.

PY - 2009

Y1 - 2009

N2 - Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2μs. Then it rose to 2.5~5μs after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48μs average, even over l00μs locally. The escape of hydrogen was discovered after sintering. The electron collection ability between Ag and AI was also compared by effective lifetime testing.

AB - Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2μs. Then it rose to 2.5~5μs after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48μs average, even over l00μs locally. The escape of hydrogen was discovered after sintering. The electron collection ability between Ag and AI was also compared by effective lifetime testing.

UR - http://www.scopus.com/inward/record.url?scp=71049179422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049179422&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2009.5232595

DO - 10.1109/IPFA.2009.5232595

M3 - Conference contribution

AN - SCOPUS:71049179422

SN - 9781424439102

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 511

EP - 514

BT - Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

T2 - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

Y2 - 6 July 2009 through 10 July 2009

ER -

Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this