ADVANTAGES OF COLLOCATION METHODS OVER FINITE DIFFERENCES IN ONE-DIMENSIONAL MONTE CARLO SIMULATIONS OF SUBMICRON DEVICES.

Umberto Ravaioli, Paolo Lugli, Mohamed A. Osman, David K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Collocation methods are very useful when one-dimensional Monte Carlo simulations of semiconductor submicron devices require a very accurate solution of Poisson's equation. Potential and electric field may be solved simultaneously with better accuracy than using finite differences. The extension of two dimensions is also outlined. Results obtained for Monte Carlo simulation of submicron W/Si and AuGaAs Schottky barrier diodes under forward bias conditions are presented. The accurate solution for the electric field at the ohmic contact boundary allows one to model the injected current and to account for depletion of carriers. Tunneling effects across the barrier are also included in the simulation.

Original languageEnglish (US)
Pages (from-to)541-545
Number of pages5
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
VolumeCAD-4
Issue number4
StatePublished - Oct 1984

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Electric fields
Schottky barrier diodes
Ohmic contacts
Poisson equation
Semiconductor devices
Monte Carlo simulation

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

ADVANTAGES OF COLLOCATION METHODS OVER FINITE DIFFERENCES IN ONE-DIMENSIONAL MONTE CARLO SIMULATIONS OF SUBMICRON DEVICES. / Ravaioli, Umberto; Lugli, Paolo; Osman, Mohamed A.; Ferry, David K.

In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. CAD-4, No. 4, 10.1984, p. 541-545.

Research output: Contribution to journalArticle

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