Abstract
SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.
Original language | English (US) |
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Title of host publication | IEEE International Conference on Group IV Photonics GFP |
Pages | 201-203 |
Number of pages | 3 |
State | Published - 2007 |
Event | 2007 4th International Conference on Group IV Photonics, GFP 2007 - Duration: Sep 19 2007 → Sep 21 2007 |
Other
Other | 2007 4th International Conference on Group IV Photonics, GFP 2007 |
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Period | 9/19/07 → 9/21/07 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials