Advances in Si-Ge-Sn materials science and technology

John Kouvetakis, John Tolle, Jose Menendez, V. R. D'Costa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Group IV Photonics GFP
Pages201-203
Number of pages3
StatePublished - 2007
Event2007 4th International Conference on Group IV Photonics, GFP 2007 -
Duration: Sep 19 2007Sep 21 2007

Other

Other2007 4th International Conference on Group IV Photonics, GFP 2007
Period9/19/079/21/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kouvetakis, J., Tolle, J., Menendez, J., & D'Costa, V. R. (2007). Advances in Si-Ge-Sn materials science and technology. In IEEE International Conference on Group IV Photonics GFP (pp. 201-203). [4347715]