TY - JOUR
T1 - Advances in processing and properties of perovskite thin-films for frams, drams, and decoupling capacitors
AU - Dey, Sandwip
AU - Barlingay, C. K.
AU - Lee, J. J.
AU - Gloerstad, T. K.
AU - Suchicital, C. T A
N1 - Funding Information:
This work was supported by the Defence Advanced Research Project Agency (DARPA). The authors would like to thank Brad Lawrence and Bill Roth of Hitachi, Nissei Sangyo America Limited for microstructural analysis of the films.
PY - 1992/7
Y1 - 1992/7
N2 - Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt/Ti/Si3N4/Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as SSO'C within 15 minutes by rapid thermal annealing. The Alms heat treated at 700 ‘C for 5 minutes were single grain thick and exhibited Pr, Psp, and Ec in the ranges of 29–32 μC/cm2, 44–53 μ'C/cm2, and 50–60 kV/cm, respectively, and high speed switching times below 5 ns on 30×30 μm2 electrodes. A switching time of 2.7 ns was observed on 19×19 μm2 area electrodes at a field of 200 kV/cm. Results of low and high Held characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density (15 C/cm2) and a low leakage current (0.5 μA/cm2) at a field of 200 kV/cm. Also, the charging time for a capacitor area of 1μm2 at 200 kV/cm was estimated to be 0.10 ns.
AB - Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt/Ti/Si3N4/Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as SSO'C within 15 minutes by rapid thermal annealing. The Alms heat treated at 700 ‘C for 5 minutes were single grain thick and exhibited Pr, Psp, and Ec in the ranges of 29–32 μC/cm2, 44–53 μ'C/cm2, and 50–60 kV/cm, respectively, and high speed switching times below 5 ns on 30×30 μm2 electrodes. A switching time of 2.7 ns was observed on 19×19 μm2 area electrodes at a field of 200 kV/cm. Results of low and high Held characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density (15 C/cm2) and a low leakage current (0.5 μA/cm2) at a field of 200 kV/cm. Also, the charging time for a capacitor area of 1μm2 at 200 kV/cm was estimated to be 0.10 ns.
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U2 - 10.1080/10584589208215710
DO - 10.1080/10584589208215710
M3 - Article
AN - SCOPUS:84947515299
SN - 1058-4587
VL - 1
SP - 181
EP - 194
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 2-4
ER -