Advancements in GaInP2/GaAs/Ge solar cells - Production status, qualification results and operational benefits

Jennifer E. Granata, James H. Ermer, Peter Hebert, Moran Haddad, Richard King, Dmitri D. Krut, Mark S. Gillanders, Nasser H. Karam, B. Terence Cavicchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

In 2001 Spectrolab completed design and qualification, and began production on the third-generation multijunction solar cell - the improved triple-junction GaInP2/GaAs/Ge. With over 21% AMO conversion efficiency at an operating temperature of 60°C at end-of-life, this cell has 16% more power than competing dual-junction designs in GEO orbit after 15 years (7 × 1014 1-MeV electron equivalence), Spectrolab is currently qualifying the fourth-generation triple-junction solar cell capable of delivering over 22% AMO conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 28%.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages824-827
Number of pages4
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period5/19/025/24/02

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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    Granata, J. E., Ermer, J. H., Hebert, P., Haddad, M., King, R., Krut, D. D., Gillanders, M. S., Karam, N. H., & Cavicchi, B. T. (2002). Advancements in GaInP2/GaAs/Ge solar cells - Production status, qualification results and operational benefits. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 824-827)