Advanced silver metallization for ULSI applications

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages202-205
Number of pages4
StatePublished - 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 21 1998Oct 23 1998

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/21/9810/23/98

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Advanced silver metallization for ULSI applications'. Together they form a unique fingerprint.

  • Cite this

    Alford, T. (1998). Advanced silver metallization for ULSI applications. In International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 202-205). IEEE.