Abstract
As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.
| Original language | English (US) |
|---|---|
| Title of host publication | International Conference on Solid-State and Integrated Circuit Technology Proceedings |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 202-205 |
| Number of pages | 4 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 21 1998 → Oct 23 1998 |
Other
| Other | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 10/21/98 → 10/23/98 |
ASJC Scopus subject areas
- General Engineering