Advanced silver metallization for ULSI applications

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages202-205
Number of pages4
StatePublished - 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 21 1998Oct 23 1998

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/21/9810/23/98

Fingerprint

Electromigration
Metallizing
Encapsulation
Silver
Oxidation resistance
Textures
Microstructure
Oxides

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Alford, T. (1998). Advanced silver metallization for ULSI applications. In International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 202-205). Piscataway, NJ, United States: IEEE.

Advanced silver metallization for ULSI applications. / Alford, Terry.

International Conference on Solid-State and Integrated Circuit Technology Proceedings. Piscataway, NJ, United States : IEEE, 1998. p. 202-205.

Research output: Chapter in Book/Report/Conference proceedingChapter

Alford, T 1998, Advanced silver metallization for ULSI applications. in International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, Piscataway, NJ, United States, pp. 202-205, Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 10/21/98.
Alford T. Advanced silver metallization for ULSI applications. In International Conference on Solid-State and Integrated Circuit Technology Proceedings. Piscataway, NJ, United States: IEEE. 1998. p. 202-205
Alford, Terry. / Advanced silver metallization for ULSI applications. International Conference on Solid-State and Integrated Circuit Technology Proceedings. Piscataway, NJ, United States : IEEE, 1998. pp. 202-205
@inbook{968575ea19c2496da181e2c5e6d2e574,
title = "Advanced silver metallization for ULSI applications",
abstract = "As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.",
author = "Terry Alford",
year = "1998",
language = "English (US)",
pages = "202--205",
booktitle = "International Conference on Solid-State and Integrated Circuit Technology Proceedings",
publisher = "IEEE",

}

TY - CHAP

T1 - Advanced silver metallization for ULSI applications

AU - Alford, Terry

PY - 1998

Y1 - 1998

N2 - As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.

AB - As IC technologies move toward ULSI, new materials are needed to achieve specific materials and device performance levels. Silver has lower resistivity and better electromigration resistance than Al and higher oxidation resistance than Cu. An encapsulation process is used to anneal a Ag/Ti/SiO2 stack structure in a flowing NH3 ambient. Results showed the formation of Ti oxide and Ti silicide at the interface. The presence of the underlying Ti film induces strong 〈111〉 Ag texture and promotes uniform microstructure evolution during encapsulation, both of which are desirable for improved electromigration reliability.

UR - http://www.scopus.com/inward/record.url?scp=0032226833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032226833&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0032226833

SP - 202

EP - 205

BT - International Conference on Solid-State and Integrated Circuit Technology Proceedings

PB - IEEE

CY - Piscataway, NJ, United States

ER -