TY - JOUR
T1 - Advanced silver-based metallization patterning for ULSI applications
AU - Alford, Terry
AU - Nguyen, Phucanh
AU - Zeng, Yuxiao
AU - Mayer, J. W.
N1 - Funding Information:
The work was partially supported by The National Science Foundation, NSF (L. Hess, Grant No. DMR-9624493) to whom the authors are greatly indebted. Support for the Center for Low Power Electronics is provided by NSF, The State of Arizona, Analog Devices, Analogy, Burr Brown, Hughes Aircraft, Intel, Microchip, Motorola, National Semiconductor, Rockwell, Scientific Monitoring, Texas Instruments, and Western Design.
PY - 2001/3
Y1 - 2001/3
N2 - Silver metallization is being investigated for potential use in future integrated circuits. Unlike the proposed copper metallization, Ag thin films can be reactive ion etched at reasonable rates using a CF4 plasma. This etch technology is an atypical `dry-etch' process since the formation of volatile products is not the main removal mechanism. The primary film removal mechanism, however, is the subsequent resist strip process. The effects of process conditions on the etch rate and post-etch surface roughness is also characterized. Our study shows that the silver etch process in the CF4 plasma depends strongly on the reactive neutrals and the removal rate is enhanced significantly by the presence of energetic ions as well.
AB - Silver metallization is being investigated for potential use in future integrated circuits. Unlike the proposed copper metallization, Ag thin films can be reactive ion etched at reasonable rates using a CF4 plasma. This etch technology is an atypical `dry-etch' process since the formation of volatile products is not the main removal mechanism. The primary film removal mechanism, however, is the subsequent resist strip process. The effects of process conditions on the etch rate and post-etch surface roughness is also characterized. Our study shows that the silver etch process in the CF4 plasma depends strongly on the reactive neutrals and the removal rate is enhanced significantly by the presence of energetic ions as well.
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U2 - 10.1016/S0167-9317(00)00471-8
DO - 10.1016/S0167-9317(00)00471-8
M3 - Article
AN - SCOPUS:0034824091
SN - 0167-9317
VL - 55
SP - 383
EP - 388
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
ER -