Adatom diffusion on Ge(111) and the corresponding activation energy barrier

Zheng Gai, Hongbin Yu, W. S. Yang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, surface diffusion of Ge adatoms on the In-stabilized moderate temperature phase of Ge(111) was studied with a room-temperature scanning tunneling microscope and it has been found that, in addition to diffusion of individual adatoms neighboring to some defects, the majority of the moving adatoms forms strings or closed loops consisting of segments lying along 〈110〉 directions. The mean lifetime of Ge adatoms on Ge(111) has been obtained, from which the activation energy barrier has been determined to be 0.83 ± 0.02 eV. This experimental result of this quantity is in excellent agreement with its theoretical value for clean Ge(111) surfaces, thus showing not only that the energy barrier obtained here is a characteristic of clean Ge(111) surfaces, but also that there is no complicated collective motion involved in surface diffusion of Ge adatoms.

Original languageEnglish (US)
Pages (from-to)13547-13550
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number20
StatePublished - May 15 1996
Externally publishedYes

Fingerprint

Adatoms
Energy barriers
adatoms
Activation energy
activation energy
Surface diffusion
surface diffusion
Microscopes
strings
microscopes
Scanning
life (durability)
Temperature
Defects
scanning
defects
room temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Adatom diffusion on Ge(111) and the corresponding activation energy barrier. / Gai, Zheng; Yu, Hongbin; Yang, W. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 20, 15.05.1996, p. 13547-13550.

Research output: Contribution to journalArticle

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